Theoretical Analysis of Elastic Modulus and Dielectric Constant for Low-<i>k</i>Two-Dimensional Periodic Porous Silica Films

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  • Miyoshi Hidenori
    MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
  • Matsuo Hisanori
    MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
  • Oku Yoshiaki
    MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
  • Tanaka Hirofumi
    MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
  • Yamada Kazuhiro
    MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
  • Mikami Noboru
    MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
  • Takada Syozo
    Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Hata Nobuhiro
    MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)
  • Kikkawa Takamaro
    MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST) Research Center for Nanodevices and Systems, Hiroshima University

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  • Theoretical Analysis of Elastic Modulus and Dielectric Constant for Low-k Two-Dimensional Periodic Porous Silica Films

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To lower the dielectric constant k of interlayer-dielectric films with two-dimensional pore structures while maintaining their mechanical strength, the influences of pore arrangement on the elastic modulus E and k of the films were investigated. It was found that periodicity in pore structure enhances E with constant k. Periodic porous silica films having a hexagonal arrangement of circular cylindrical pores with k<2.0 and E>3 GPa were demonstrated to be feasible at a porosity of 0.614 using a bulk material with a k of 4.0 and E>21 GPa.

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