Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy

• Tohru Suzuki

• Akiko Gomyo

• Sumio Iijima

• Kenichi Kobayashi

• Seiji Kawata

• Isao Hino

• Tonao Yuasa

抄録

The previously reported photoluminescence(PL)-peak-energy anomaly problem for Ga 0.5 In 0.5 P grown on GaAs by metalorganic vapor phase epitaxy (MOVPE) was studied in detail. X-ray microprobe analysis, and optical transmission spectra measurements were carried out to examine alloy compositions and band-gap energies ( E g s), respectively. The MOVPE growth condition dependence of {1/2, 1/2, 1/2} superlattices (SLs) on the cation sublattice in Ga 0.5 In 0.5 P was studied in detail, using transmission electron microscopy. The correlation between the E g anomaly and the SLs was examined in detail and established. Raman spectra seemed to show zone-folding effects due to the monolayer SL. A similar E g anomaly was reported for AlGaInP. AlGaInP and AlInP were also found to show the same SLs.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 27 (11R), 2098-, 1988-11-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003446839294464
• NII論文ID: 30021856553
• NII論文ID: 210000026565
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.27.2098
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.27.2098
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.27.2098/pdf
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