High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiN_x/a-Si Interface

• Hiroyuki Uchida

• Kazushige Takechi

• Shinichi Nishida Shinichi Nishida

• Setsuo Kaneko Setsuo Kaneko

抄録

Through use of an atomic force microscope (AFM), surface morphologies for SiN x and a-Si:H films were investigated. By controlling deposition conditions, very smooth films have been obtained. The thin film transistor (TFT) with smooth a-Si:H on smooth SiN x has both high mobility (1.0 cm 2 ·V -1 ·s -1 ) and high stability at the same time. This high-performance TFT will make an important impact in application to high-pixel-density liquid crystal displays (LCDs), such as for use in workstations and high-definition television (HDTV).

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 30 (12S), 3691-, 1991-12-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360284921817578496
• NII論文ID: 30021860750
• NII論文ID: 210000030925
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.30.3691
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.30.3691
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.30.3691/pdf
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