Ion Range and Damage Calculations Using the Boltzmann Transport Equation

• Tohru Ishitani

抄録

A modified computational method using the Boltzmann transport equation for calculating the depth distributions of implanted ions, nuclear deposited energy, vacancies, and interstitials is presented. The main modification is based on employment both of the depth interval, taken as half of the desired depth resolution, and of the ion step length, using the single scattering model. A higher efficiency in computing time is obtained for higher-energy ion implantation. The calculations are carried out for the implantation of boron and arsenic ions with 10 keV ∼2 MeV into silicon targets.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 29 (1R), 162-, 1990-01-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566396793579648
• NII論文ID: 30021864185
• NII論文ID: 210000028912
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.29.162
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.29.162
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.29.162/pdf
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