Bridgman and Czochralski growth of GeSi alloy crystals

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<jats:title>Abstract</jats:title><jats:p>Ge<jats:sub>1–<jats:italic>x</jats:italic></jats:sub>Si<jats:sub><jats:italic>x</jats:italic></jats:sub> crystals were grown with the Bridgman and the Czochralski method over a wide concentration range. With the Bridgman process single crystals up to 40 at.% Si were possible. The reasons for polycrystalline growth were the permanent contact of the interface with the crucible wall in combination with curvature towards the crystal and inclusions of high Si concentration. Analysis of striations in Czochralski grown material showed that in this process the crystal does not continuously grow in one direction but consists of piece‐wise grown crystals in which the composition permanently changes. According to that fact the main reason for polycrystalline growth in the Czochralski process is common due to lattice mismatch between the seed and equilibrium concentration transients in the crystal corresponding to the microscopic growth rates.</jats:p>

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