熱活性型RFプラズマCVD法によるBN膜の生成条件

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タイトル別名
  • Conditions for Formation of BN Film by Thermally Assisted RF Plasma CVD
  • ネツ カッセイガタ RF プラズマ CVDホウ ニ ヨル BN マク ノ セイ

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抄録

A new synthesis technique of boron nitride (BN) is described and formation conditions of cubic boron nitride (cBN) are discussed. Raw reactive gases B2H6+NH3+H2 were excited into plasma state by radio frequency (RF) induction of 13.56 MHz. The gas plasma was thermally activated by a hot tungsten filament and BN film was deposited on a Si substrate heated at an optimum temperature of 1073 K. Crystal structures of as-deposited films prepared under various deposition conditions were analysed by transmission electron microscopy and infrared absorption spectroscopy. The surface and cross-section of BN films were observed by scanning electron microscopy (SEM). It was found that the crystal structure of BN film strongly depends on the tungsten filament temperature, total gas pressure and RF power. SEM study showed that the film surface is smooth for t-BN but very rough for cBN. Many semisphere grains are seen on the surface of the cBN films and the grain size tends to increase with the increase of film thickness. According to a cross-sectional SEM study, the semisphere grains were found to be composed of columnar structures which grew perpendicularly to the substrate plane.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 54 (2), 186-192, 1990

    公益社団法人 日本金属学会

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