減圧CVD法により成膜したアモルファスB-N-C膜の残留応力に対するア二ール効果

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タイトル別名
  • Effect of Annealing on Residual Stress in Amorphous B-N-C Films Prepared by Low Pressure CVD Method
  • 減圧CVD法により成膜したアモルファスB-N-C膜の残留応力に対するアニール効果
  • ゲンアツ CVDホウ ニ ヨリ セイマクシタ アモルファス B N C マク

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抄録

Amorphous BN (a-BN) films are very promising materials for the mask membrane of X-ray lithography because of their high transparency to X-rays. Characteristics of films used for the mask menbrane demand the tensile stress to Si-wafer substrate and the high optical transmittance to the He-Ne laser used for mask alignment.<BR>It was, however, very difficult to obtain a-BN films fully satisfying such requirements as mentioned above. We tried adding carbon to a-BN films and, as the result, obtained the conditions to produce a-BNC films suitable for the mask membrane. It is naturally considered that a-BNC films as deposited change their characteristics by annealing. Then, we investigated the effects of anneal on stress in films. Vacuum-annealing over the deposition temperature resulted in the decrease of stress for a-BNC films contrary to the increase of stress in a-BN films. This fact is so well corresponding to the result that the amount of the bonded hydrogen increased in a-BNC films but decreased in a-BN films. On the other hand, for the relationship between the intrinsic stress and the total hydrogen in a-BNC films deposited at various temperatures, the stress increased with increasing total hydrogen which was opposed to the behavior of a-BN films.

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 56 (4), 459-463, 1992

    公益社団法人 日本金属学会

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