High Performance Chemically Amplified Positive Electron-Beam Resist: Optimization of Base Additives for Environmental Stabilization.
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- SAITO SATOSHI
- Toshiba Corp., Materials&Devices Research Labs.
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- KIHARA NAOKO
- Toshiba Corp., Materials&Devices Research Labs.
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- NAITO TAKUYA
- Toshiba Corp., Materials&Devices Research Labs.
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- NAKASE MAKOTO
- Toshiba Corp., Materials&Devices Research Labs.
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- NAKASUGI TETSURO
- Toshiba Corp., ULSI Process Eng. Labs.
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- KATO YOSHIMITSU
- Toshiba Corp., ULSI Process Eng. Labs.
書誌事項
- タイトル別名
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- High Performance Chemically Amplified P
- OPTIMIZATION OF BASE ADDITIVES FOR ENVIRONMENTAL STABILIZATION
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抄録
The effects of base additives in chemically amplified positive electron-beam (EB) resist are discussed. The amine additives can improve the resolution of the resist by preventing diffusion of acids outside the exposed area. As a result, 0.1-μm L/S patterns can be obtained, successfully. Additionally, the amine additives can also improve the environmental stability. However, it was demonstrated that the influence on environmental stability differs depending on the chemical structure of amine. The phenomenon is attributable to the process of a proton-base reaction which is investigated by semi-empirical molecular orbital calculation.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 9 (4), 677-684, 1996
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詳細情報 詳細情報について
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- CRID
- 1390282679302186368
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- NII論文ID
- 130003489019
- 40005351740
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DyaK28XksVais7g%3D
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- ISSN
- 13496336
- 09149244
- http://id.crossref.org/issn/09149244
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- NDL書誌ID
- 4142726
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可