Sputter Depth Profiling by SIMS; Calibration of SIMS Depth Scale Using Multi-layer Reference Materials
-
- Kim K. J.
- Division of Industrial Metrology, Korea Research Institute of Standards and Science
-
- Jang J. S.
- Division of Industrial Metrology, Korea Research Institute of Standards and Science
-
- Hong T. E.
- Busan Center, Korea Basic Science Institute
この論文をさがす
抄録
<p> In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluate SIMS depth resolution, to calibrate the depth scale and to monitor sputtering uniformity. The scale of a stylus profilometer can be also calibrated by comparison of the crater depths measured by a stylus profilometer and the certified thickness of the reference material measured by high resolution TEM. In a Korean round robin test for the scale calibration of a stylus profilometer using a Si/Ge multiple delta-layer (MDL), the average slope of the linear fitting results between the measured depth and the nominal depth was 0.989 with the standard deviation of 0.05. In depth scale calibration using a Si/Ge multi-layer reference material showed that the determination of interface position is very important to calibrate the sputtering rates of two different constituent materials. Especially, it is critical to define the positions of interfaces in a SIMS depth profile with interface artifacts.</p>
収録刊行物
-
- Journal of Surface Analysis
-
Journal of Surface Analysis 15 (3), 229-234, 2009
一般社団法人 表面分析研究会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001288083101056
-
- NII論文ID
- 130007499076
-
- NII書誌ID
- AA11448771
-
- ISSN
- 13478400
- 13411756
-
- NDL書誌ID
- 10226403
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可