Switching Field Distributions in GMR Patterns with GdFe Free Layers Obtained by High-resolution Magneto-optical Microscopy

DOI Web Site 被引用文献1件 参考文献5件
  • Ishibashi T.
    Nagaoka University of Technology
  • Oshino Y.
    Nagaoka University of Technology
  • Aoshima K.
    Science and Technology Research Lab., <i>NHK Japan Broadcasting Corp</i>.
  • Machida K.
    Science and Technology Research Lab., <i>NHK Japan Broadcasting Corp</i>.
  • Kuga K.
    Science and Technology Research Lab., <i>NHK Japan Broadcasting Corp</i>.
  • Kikuchi H.
    Science and Technology Research Lab., <i>NHK Japan Broadcasting Corp</i>.
  • Shimidzu N.
    Science and Technology Research Lab., <i>NHK Japan Broadcasting Corp</i>.

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  The switching field distributions in GMR devices with GdFe free layers of Si/Ru (3 nm)/Cu (75 nm)/Ru (3 nm)/Cu (70 nm)/Ru (13 nm)/TbFeCo (10 nm)/CoFe (1 nm)/Ag (6 nm)/ GdFe (16.5 nm)/Ru (3 nm) were studied by using high-resolution magneto-optical (MO) microscopy. The MO images of patterns with shapes of circles, triangles, squares and hexagonals, and in various sizes with lengths along one side of 200 nm-50 μm and periods of 1-100 μm are studied. The high-resolution MO microscope had a CaF2 zoom lens that allowed us to obtain a spatial resolution as high as 200 nm. The switching field distributions were measured for the patterns with lengths along one side of 5-50 μm by analyzing the MO images.

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