Effect of Growth Temperature on Formation of Amorphous Nitride Interlayer between AlN and Si(111)

• Pei-Yin Lin

• Jr-Yu Chen

• Yu-Chang Chen

書誌事項

タイトル別名

• Special Issue : Recent Advances in Nitride Semiconductors

収録刊行物

• Japanese journal of applied physics : JJAP

  Japanese journal of applied physics : JJAP 52 (8), 2013-08

  Tokyo : The Japan Society of Applied Physics

詳細情報

• CRID: 1520009409321391616
• NII論文ID: 40019757886
• NII書誌ID: AA12295836
• ISSN: 00214922
• NDL書誌ID: 024786042
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024786042
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles