塩基性浴での電析による Bi_<i>x</i>Sb_2−<i>x</i>Te₃ 薄膜熱電素子の作製

• 鈴木 佑輝

  早稲田大学創造理工学部・研究科

• 陳 子諒

  早稲田大学創造理工学部・研究科

• 不破 章雄

  早稲田大学創造理工学部・研究科

書誌事項

タイトル別名

• Preparation of Bi_<i>x</i>Sb_2−<i>x</i>Te₃ Thermoelectric Thin Films by Electrodeposition from Basic Solutions
• 塩基性浴での電析によるBi[x]Sb₂₋xTe₃薄膜熱電素子の作製
• エンキセイヨク デ ノ デンセキ ニ ヨル Bi[x]Sb ₂ ₋ xTe ₃ ハクマク ネツデンソシ ノ サクセイ
• Preparation of BixSb2^|^minus;xTe3 Thermoelectric Thin Films by Electrodeposition from Basic Solutions

抄録

  Bismuth antimony telluride Bi_xSb_2−xTe₃ thermoelectric thin films were prepared by electrodeposition from alkaline solution adjusted to pH=9.0 in order to inhibit hydrogen from generating. NTA (nitrile-tri-acetic acid: C₆H₉NO₆) was used so as to increase solubility of bismuth in the alkaline solution.<br>   Electrochemical behaviors of Bi(III), Te(IV), Sb(III) and their mixtures were firstly investigated by LSV (linear sweep voltammetry) for elucidation of electrochemical condition of diffusion controlled deposition. Then, Bi_xSb_2−xTe₃ electrochemical deposition experiments were conducted from the mixed solution under potential of diffusion controlled condition, i.e. −0.7 V, −0.8 V, and −0.9 V, where [Bi]/[Sb] ratio in solution was varied from 0 to 13 while keeping [Bi]+[Sb]=2 mmol/L, [Te]=1.6 mmol/L, [NTA]=0.1 mol/L and 333 K using rubber heater.<br>   Thermoelectric power properties such as semiconductor type, electric conductivity, Seebeck factor and power factor were measured and evaluated for the Bi_xSb_2−xTe₃.<br>   The experiment results revealed are as follows: (1) Bi_xSb_2−xTe₃ thin films can be obtained by electrochemical deposition at electric potential (−0.7~−1.0 V) under limiting current density from alkaline solution including NTA, (2) composition of films can be controlled by the mixed solution composition as well as imposed electric potential, (3) the (015) crystalline face orientation becomes stronger when absolute value of imposed potential becomes smaller, and (4) n-type semiconducting thermoelectric thin films can be prepared when x is smaller than 0.6, and p-type thin films can be prepared when x is larger than 0.6.<br>

収録刊行物

• 日本金属学会誌

  日本金属学会誌 78 (8), 310-316, 2014

  公益社団法人 日本金属学会

キーワード

• basic solution
• electrodeposition
• bismuth antimony telluride
• nitrilotriacetic acid
• thermo-electric power
• property evaluation

詳細情報

• CRID: 1390001206481039232
• NII論文ID: 130004678163
• NII書誌ID: AN00187860
• DOI: 10.2320/jinstmet.j2014013
• ISSN: 18806880
• ISSN: 24337501
• ISSN: 00214876
• NDL書誌ID: 025746815
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I025746815
• Web Site: https://www.jstage.jst.go.jp/article/jinstmet/78/8/78_J2014013/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可