Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

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  • Khurelbaatar Zagarzusem
    School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University
  • Shim Kyu-Hwan
    School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University
  • Cho Jaehee
    School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University
  • Hong Hyobong
    IT Convergence Technology Research Laboratory, Electronics & Telecommunication Research Institute
  • Reddy V. Rajagopal
    Department of Physics, Sri Venkateswara University
  • Choi Chel-Jong
    School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University

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The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height (ΦB), ideality factor (n), saturation current (I0), doping concentration (ND), and series resistance (Rs), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(Io/T2) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height (\barΦ bo) and standard deviation (σ0) calculated using the apparent Schottky barrier height (Φap) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of ln(I0/T2) − (qσ)2/2(kT)2 versus 1000/T, the A** was extracted as 134 A/cm2 K2, which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperature. Furthermore, the conduction mechanism dominating the reverse-bias leakage current in Au/PEDOT:PSS/n-Si SBD was described and discussed.

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