電子デバイスのオペランド光電子分光実験

• 永村 直佳

  物質・材料研究機構

• 堀場 弘司

  高エネルギー加速器研究機構

• 尾嶋 正治

  東京大学放射光連携研究機構

書誌事項

タイトル別名

• <i>Operando</i> Scanning Photoelectron Microscopy Analysis for Electronic Devices
• デンシ デバイス ノ オペランド コウデンシ ブンコウ ジッケン

抄録

Scanning photoelectron microscopy (SPEM) is one of the most powerful tools for microfabricated electronic device analysis. In order to understand operation characteristics of real devices, “operando analysis”, i.e., measurement during device operation, is needed. In this report, we present our operando SPEM system, called “3D nano-ESCA” using synchrotron radiation soft X-ray. The 3D nano-ESCA enable us to perform nano-scale pin-point analysis and nondestructive depth profiling, thus we can investigate the effect of surfaces, interfaces and defects on transport characteristics. We have carried out the operando SPEM analysis of graphene field effect transistors (FETs) and organic FETs. Charge transfer region at a metal electrode/graphene channel was successfully detected for the first time. Moreover, pin-point photoemission spectroscopy on the channel under biasing at the gate and drain electrodes clarify energy alignment inside the devices.

収録刊行物

• 表面科学

  表面科学 37 (1), 25-30, 2016

  公益社団法人 日本表面科学会

キーワード

• <i>operando</i> analysis
• scanning photoelectron microscopy
• graphene FET
• organic FET

詳細情報

• CRID: 1390001206458160000
• NII論文ID: 130005121614
• NII書誌ID: AN00334149
• DOI: 10.1380/jsssj.37.25
• ISSN: 18814743
• ISSN: 03885321
• NDL書誌ID: 027052756
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I027052756
• Web Site: https://www.jstage.jst.go.jp/article/jsssj/37/1/37_25/_pdf
• 本文言語コード: ja
• データソース種別:
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