Simulation of the Si Precipitation Process in Mg₂Si Using a Phase-Field Kinetic Model

• Liu Bin

  Graduate School of Science and Engineering, Ibaraki University

• Ikeda Teruyuki

  Department of Materials Science and Engineering, Faculty of Engineering, Ibaraki University

• Sasajima Yasushi

  Department of Materials Science and Engineering, Faculty of Engineering, Ibaraki University Frontier Research Center for Applied Atomic Sciences, Ibaraki University

Bibliographic Information

Other Title

• Simulation of the Si Precipitation Process in Mg₂Si Using a Phase-Field Kinetic Model

Abstract

The Si precipitation process in an Mg₂Si matrix has been simulated by the phase-field kinetic model, considering the eigen strain at the interface between precipitates and the matrix. We observed that the shape of the precipitate changed during the course of heat treatment from circular to lenticular. As the Si precipitate grew larger, the adjacent precipitate aggregated to form a lamellar microstructure. This microstructure is suitable for thermo-electric materials because the scattering of phonons will frequently occur at the interface between the Si precipitates and the Mg₂Si matrix. Our present simulation suggests drastic improvements of thermo-electric properties of this type of material are possible due to the eigen strain.

Journal

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 57 (6), 922-926, 2016

  The Japan Institute of Metals and Materials

Keywords

• Mg₂Si
• phase-field
• precipitation
• eigen strain
• thermo-electric

Details

• CRID: 1390001204252869120
• NII Article ID: 130005153147
• NII Book ID: AA1151294X
• DOI: 10.2320/matertrans.m2015479
• ISSN: 13475320
• ISSN: 13459678
• NDL BIB ID: 027331327
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I027331327
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/57/6/57_M2015479/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed