Precise Synthesis of Fluorine-containing Block Copolymers via RAFT

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  • Nakatani Ryuichi
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology
  • Takano Hiroki
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology
  • Wang Lei
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology
  • Chandra Alvin
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology
  • Tanaka Yuki
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology
  • Maeda Rina
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology
  • Kihara Naoko
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Minegishi Shinya
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Miyagi Ken
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Kasahara Yusuke
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Sato Hironobu
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Seino Yuriko
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Azuma Tsukasa
    DSA Research Department, EUVL Infrastructure Development Center, Inc.
  • Ober Christopher K.
    Department of Materials Science and Engineering, Cornell University
  • Hayakawa Teruaki
    Department of Organic and Polymeric Materials, Tokyo Institute of Technology

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Lamellar-forming PMAPOSS-b-PTFEMA block copolymers with unimodal GPC chromatograms were successfully synthesized by the polymerization of TFEMA in the presence of PMAPOSS as a macro-RAFT agent and AIBN as the initiator via RAFT. The SAXS, AFM and GISAXS data showed the lamellar domain was perpendicularly oriented to the Si-substrate after atmospheric thermal annealing. These experimental results also show that it is possible to precisely produce PMAPOSS-b-PTFEMA quantitatively, impervious to any side reactions. This technique is vital to meet the growing demands of the microelectronics industry for high throughput devices of ever-decreasing sizes.

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