Characterization of deep impurity levels in semiconductor devices by the junction capacitance method 接合容量法による半導体素子中の深い不純物準位の解析

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Author

    • 熊谷, 修 クマガイ, オサム

Bibliographic Information

Title

Characterization of deep impurity levels in semiconductor devices by the junction capacitance method

Other Title

接合容量法による半導体素子中の深い不純物準位の解析

Author

熊谷, 修

Author(Another name)

クマガイ, オサム

University

大阪大学

Types of degree

工学博士

Grant ID

乙第3305号

Degree year

1984-02-15

Note and Description

博士論文

1access

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Codes

  • NII Article ID (NAID)
    500000035076
  • NII Author ID (NRID)
    • 8000000035137
  • Text Lang
    • und
  • NDLBibID
    • 000000199390
  • Source
    • Institutional Repository
    • NDL ONLINE

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