Pulsed XeCl excimer laser annealing of silicon film

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博士論文

TABLE OF CONTENTS / p1 (0003.jp2)
CHAPTER1 INTRODUCTION / (0005.jp2)
1.1 Motivation of This Work / p1 (0005.jp2)
1.2 Organization / p5 (0007.jp2)
CHAPTER2 PULSED EXCIMER LASER ANNEALING OF a-Si:H / (0008.jp2)
2.1 Introduction / p6 (0008.jp2)
2.2 Laser-Induced Crystallization / p7 (0008.jp2)
2.3 Laser-Induced Amorphization / p21 (0015.jp2)
2.4 Heating Properties of Glass Substrate During and after Laser-Induced Crystallization of a-Si:H / p41 (0025.jp2)
2.5 Summary / p49 (0029.jp2)
CHAPTER3 LASER DOPING / (0030.jp2)
3.1 Introduction / p51 (0030.jp2)
3.2 Laser Doping of Crystalline Silicon / p52 (0031.jp2)
3.3 Laser Doping of Polycrystalline Silicon Film and Laser-Induced Activation of Doped Silicon Film / p83 (0046.jp2)
3.4 Control of Dopant Concentration / p94 (0052.jp2)
3.5 Summary / p97 (0053.jp2)
CHAPTER4 FABRICATION AND CHARACTERIZATION OF POLY-Si TFTs / (0054.jp2)
4.1 Introduction / p99 (0054.jp2)
4.2 Fabrication and Cahracterization of Poly-Si TFTs / p100 (0055.jp2)
4.3 Application of Poly-Si TFTs to Active MatriX Arrays for Liquid Crystal Displays / p115 (0062.jp2)
4.4 Summary / p118 (0064.jp2)
CHAPTER5 CONCLUSIONS / (0064.jp2)
5.1 Conclusions / p119 (0064.jp2)
5.2 Suggestions for Future Work / p122 (0066.jp2)
REFERENCES / p124 (0067.jp2)
LIST OF PUBLISHED PAPERS / p130 (0070.jp2)