Deep level characterization of GaAs and AlGaAs by capacitance spectroscopy 容量分光法によるGaAsおよびAlGaAsの深い準位の評価

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著者

    • 橋詰, 保 ハシズメ, タモツ

書誌事項

タイトル

Deep level characterization of GaAs and AlGaAs by capacitance spectroscopy

タイトル別名

容量分光法によるGaAsおよびAlGaAsの深い準位の評価

著者名

橋詰, 保

著者別名

ハシズメ, タモツ

学位授与大学

北海道大学

取得学位

工学博士

学位授与番号

乙第3905号

学位授与年月日

1991-03-25

注記・抄録

博士論文

目次

  1. CONTENTS / p1 (0006.jp2)
  2. Acknowledgments / p1 (0004.jp2)
  3. CHAPTER 1 INTRODUCTION / p1 (0009.jp2)
  4. 1.1 Historical Backgrounds / p1 (0009.jp2)
  5. 1.2 Objective of The Thesis / p6 (0014.jp2)
  6. 1.3 Synopsis of Chapters / p8 (0016.jp2)
  7. REFERENCES / p12 (0020.jp2)
  8. CHAPTER 2 ELECTRICAL BEHAVIOR OF DEEP LEVELS AND CAPACITANCE SPECTROSCOPY / p14 (0022.jp2)
  9. 2.1 Introduction / p14 (0022.jp2)
  10. 2.2 Occupation Function of Deep Levels / p15 (0023.jp2)
  11. 2.3 Bias and Tme Dependence of Junction Capacitance / p18 (0026.jp2)
  12. 2.4 Deep Level Transient Spectroscopy (DLTS) / p22 (0030.jp2)
  13. 2.5 Photocapacitance (PHCAP) / p28 (0036.jp2)
  14. REFERENCES / p35 (0043.jp2)
  15. CHAPTER 3 DEEP LEVELS IN BULK GaAs GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD / p36 (0044.jp2)
  16. 3.1 Introduction / p36 (0044.jp2)
  17. 3.2 Samples / p38 (0046.jp2)
  18. 3.3 Results and discussion / p40 (0048.jp2)
  19. 3.4 Conclusion / p54 (0062.jp2)
  20. REFERENCES / p56 (0064.jp2)
  21. CHAPTER 4 DEEP LEVELS IN UNDOPED EPITAXIAL GaAs / p59 (0067.jp2)
  22. 4.1 Introduction / p59 (0067.jp2)
  23. 4.2 Electron States in Metalorganic Vapor Phase Epitaxy Grown GaAs / p61 (0069.jp2)
  24. 4.3 Electron States in Molecular Beam Epitaxy Grown GaAs / p70 (0078.jp2)
  25. 4.4 Conclusion / p84 (0092.jp2)
  26. REFERENCES / p86 (0094.jp2)
  27. CHAPTER 5 MIDGAP STATES IN AlGaAs GROWN BY METALORGANIC VAPOR PHASE EPITAXY / p88 (0096.jp2)
  28. 5.1 Introduction / p88 (0096.jp2)
  29. 5.2 Experimental / p90 (0098.jp2)
  30. 5.3 DLTS Study / p91 (0099.jp2)
  31. 5.4 Photocapacitance Study / p96 (0104.jp2)
  32. 5.5 Discussion / p111 (0119.jp2)
  33. 5.6 Conclusion / p115 (0123.jp2)
  34. REFERENCES / p117 (0125.jp2)
  35. CHAPTER 6 VARIATION OF DEEP LEVELS IN BULK GaAs CAUSED BY γ-IRRADIATION / p120 (0128.jp2)
  36. 6.1 Introduction / p120 (0128.jp2)
  37. 6.2 Experimental / p122 (0130.jp2)
  38. 6.3 Results and Discussion / p122 (0130.jp2)
  39. 6.4 Conclusion / p137 (0145.jp2)
  40. REFERENCES / p138 (0146.jp2)
  41. CHAPTER 7 VARIATION OF NEAR-SURFACE DEEP LEVELS IN CAPPED GaAs CAUSED BY ANNEALING / p141 (0149.jp2)
  42. 7.1 Introduction / p141 (0149.jp2)
  43. 7.2 Experimental / p142 (0150.jp2)
  44. 7.3 Results / p144 (0152.jp2)
  45. 7.4 Discussion / p156 (0164.jp2)
  46. 7.5 Conclusion / p158 (0166.jp2)
  47. REFERENCES / p160 (0168.jp2)
  48. CHAPTER 8 CONCLUSION / p162 (0170.jp2)
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各種コード

  • NII論文ID(NAID)
    500000073701
  • NII著者ID(NRID)
    • 8000000073898
  • DOI(NDL)
  • NDL書誌ID
    • 000000238015
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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