Deep level characterization of GaAs and AlGaAs by capacitance spectroscopy 容量分光法によるGaAsおよびAlGaAsの深い準位の評価
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著者
書誌事項
- タイトル
-
Deep level characterization of GaAs and AlGaAs by capacitance spectroscopy
- タイトル別名
-
容量分光法によるGaAsおよびAlGaAsの深い準位の評価
- 著者名
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橋詰, 保
- 著者別名
-
ハシズメ, タモツ
- 学位授与大学
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北海道大学
- 取得学位
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工学博士
- 学位授与番号
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乙第3905号
- 学位授与年月日
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1991-03-25
注記・抄録
博士論文
目次
- CONTENTS / p1 (0006.jp2)
- Acknowledgments / p1 (0004.jp2)
- CHAPTER 1 INTRODUCTION / p1 (0009.jp2)
- 1.1 Historical Backgrounds / p1 (0009.jp2)
- 1.2 Objective of The Thesis / p6 (0014.jp2)
- 1.3 Synopsis of Chapters / p8 (0016.jp2)
- REFERENCES / p12 (0020.jp2)
- CHAPTER 2 ELECTRICAL BEHAVIOR OF DEEP LEVELS AND CAPACITANCE SPECTROSCOPY / p14 (0022.jp2)
- 2.1 Introduction / p14 (0022.jp2)
- 2.2 Occupation Function of Deep Levels / p15 (0023.jp2)
- 2.3 Bias and Tme Dependence of Junction Capacitance / p18 (0026.jp2)
- 2.4 Deep Level Transient Spectroscopy (DLTS) / p22 (0030.jp2)
- 2.5 Photocapacitance (PHCAP) / p28 (0036.jp2)
- REFERENCES / p35 (0043.jp2)
- CHAPTER 3 DEEP LEVELS IN BULK GaAs GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD / p36 (0044.jp2)
- 3.1 Introduction / p36 (0044.jp2)
- 3.2 Samples / p38 (0046.jp2)
- 3.3 Results and discussion / p40 (0048.jp2)
- 3.4 Conclusion / p54 (0062.jp2)
- REFERENCES / p56 (0064.jp2)
- CHAPTER 4 DEEP LEVELS IN UNDOPED EPITAXIAL GaAs / p59 (0067.jp2)
- 4.1 Introduction / p59 (0067.jp2)
- 4.2 Electron States in Metalorganic Vapor Phase Epitaxy Grown GaAs / p61 (0069.jp2)
- 4.3 Electron States in Molecular Beam Epitaxy Grown GaAs / p70 (0078.jp2)
- 4.4 Conclusion / p84 (0092.jp2)
- REFERENCES / p86 (0094.jp2)
- CHAPTER 5 MIDGAP STATES IN AlGaAs GROWN BY METALORGANIC VAPOR PHASE EPITAXY / p88 (0096.jp2)
- 5.1 Introduction / p88 (0096.jp2)
- 5.2 Experimental / p90 (0098.jp2)
- 5.3 DLTS Study / p91 (0099.jp2)
- 5.4 Photocapacitance Study / p96 (0104.jp2)
- 5.5 Discussion / p111 (0119.jp2)
- 5.6 Conclusion / p115 (0123.jp2)
- REFERENCES / p117 (0125.jp2)
- CHAPTER 6 VARIATION OF DEEP LEVELS IN BULK GaAs CAUSED BY γ-IRRADIATION / p120 (0128.jp2)
- 6.1 Introduction / p120 (0128.jp2)
- 6.2 Experimental / p122 (0130.jp2)
- 6.3 Results and Discussion / p122 (0130.jp2)
- 6.4 Conclusion / p137 (0145.jp2)
- REFERENCES / p138 (0146.jp2)
- CHAPTER 7 VARIATION OF NEAR-SURFACE DEEP LEVELS IN CAPPED GaAs CAUSED BY ANNEALING / p141 (0149.jp2)
- 7.1 Introduction / p141 (0149.jp2)
- 7.2 Experimental / p142 (0150.jp2)
- 7.3 Results / p144 (0152.jp2)
- 7.4 Discussion / p156 (0164.jp2)
- 7.5 Conclusion / p158 (0166.jp2)
- REFERENCES / p160 (0168.jp2)
- CHAPTER 8 CONCLUSION / p162 (0170.jp2)
