Research on GaInAsP/AlGaAs red-light injection lasers GaInAsP/AlGaAs赤色半導体レーザの研究
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著者
書誌事項
- タイトル
-
Research on GaInAsP/AlGaAs red-light injection lasers
- タイトル別名
-
GaInAsP/AlGaAs赤色半導体レーザの研究
- 著者名
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鄭, 台鎬
- 著者別名
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チョン, テホ
- 学位授与大学
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上智大学
- 取得学位
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工学博士
- 学位授与番号
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甲第107号
- 学位授与年月日
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1991-03-31
注記・抄録
博士論文
目次
- CONTENTS / p1 (0005.jp2)
- CHAPTER I / p1 (0008.jp2)
- INTRODUCTION / p1 (0008.jp2)
- 1.1 Research Background of Red-light Injection Lasers / p2 (0009.jp2)
- 1.2 Features of GaInAsP/AlGaAs Lasers / p15 (0022.jp2)
- 1.3 Purpose and Content of This Study / p16 (0023.jp2)
- Chapter II / p18 (0025.jp2)
- GROWTH CONDITIONS OF GaInAsP/AlGaAs LAYERS ON GaAs SUBSTRATES BY LPE / p18 (0025.jp2)
- 2.1 Introduction / p19 (0026.jp2)
- 2.2 Liquid Phase Epitaxial Growth Technique / p20 (0027.jp2)
- 2.3 Phase Equilibria in the GaInAsP/AlGaAs System / p25 (0032.jp2)
- 2.4 Lattice Matching Conditions / p31 (0038.jp2)
- 2.5 Characterization of Epitaxial Layers / p38 (0045.jp2)
- 2.6 Conclusion / p56 (0063.jp2)
- Chapter III / p57 (0064.jp2)
- REDUCTION OF THE THRESHOLD CURRENT DENSITY OF GaInASP/AlGaAs DOUBLE HETEROSTRUCTURE LASERS / p57 (0064.jp2)
- 3.1 Introduction / p58 (0065.jp2)
- 3.2 GaInAsP/AlGaAs DII Lasers / p60 (0067.jp2)
- 3.3 Threshold Current Density Reduction / p65 (0072.jp2)
- 3.4 Theoretical Consideration of Threshold Current Density / p71 (0078.jp2)
- 3.5 Conclusion / p82 (0089.jp2)
- Chapter IV / p83 (0090.jp2)
- ROOM TEMPERATURE CONTINUOUS WAVE OPERATION OF GaInAsP/AlGaAs VSIS LASERS / p83 (0090.jp2)
- 4.1 Introduction / p84 (0091.jp2)
- 4.2 Investigations on CW Operations / p85 (0092.jp2)
- 4.3 Fabrication of VSIS Lasers / p94 (0101.jp2)
- 4.4 Lasing Characteristics of VSIS Lasers / p101 (0108.jp2)
- 4.5 Conclusion / p108 (0115.jp2)
- Chapter V / p109 (0116.jp2)
- DESIGN, FABRICATION, AND LASING CHARACTERISTICS OF GaInAsP/AlGaAs DISTRIBUTED FEEDBACK LASERS / p109 (0116.jp2)
- 5.1 Introduction / p110 (0117.jp2)
- 5.2 Structural Design of GaInAsP/AlGaAs DFB Lasers / p111 (0118.jp2)
- 5.3 GaInAsP/AlGaAs DFB Lasers Grown by Two-step LPE / p125 (0132.jp2)
- 5.4 Ridge Waveguide Structure GaInAsP/AlGaAs DFB Lasers / p132 (0139.jp2)
- 5.5 Conclusion / p143 (0150.jp2)
- Chapter VI / p144 (0151.jp2)
- 670nm WAVELENGTH GaInAsP/AlGaAs VSIS-DFB LASERS / p144 (0151.jp2)
- 6.1 Introduction / p145 (0152.jp2)
- 6.2 Thermal Deformation of GaInP Gratings / p146 (0153.jp2)
- 6.3 Asymmetrical Waveguide Structure / p150 (0157.jp2)
- 6.4 GaInAsP/AlGaAs VSIS-DFB Lasers Grown by LPE and GSMBE / p155 (0162.jp2)
- 6.5 Conclusion / p161 (0168.jp2)
- Chapter VII / p162 (0169.jp2)
- CONCLUDING REMARKS / p162 (0169.jp2)
- APPENDIX / p166 (0173.jp2)
- A. Gain Measurements in GaInAsP/AlGaAs DH Lasers / p167 (0174.jp2)
- B. Facet Coatings (AR and HR) by RF-Sputtering / p177 (0184.jp2)
- ACKNOWLEDGMENTS / p187 (0194.jp2)
- REFERENCES / p190 (0197.jp2)
- LIST OF PUBLICATIONS / p212 (0219.jp2)