Research on GaInAsP/AlGaAs red-light injection lasers GaInAsP/AlGaAs赤色半導体レーザの研究

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著者

    • 鄭, 台鎬 チョン, テホ

書誌事項

タイトル

Research on GaInAsP/AlGaAs red-light injection lasers

タイトル別名

GaInAsP/AlGaAs赤色半導体レーザの研究

著者名

鄭, 台鎬

著者別名

チョン, テホ

学位授与大学

上智大学

取得学位

工学博士

学位授与番号

甲第107号

学位授与年月日

1991-03-31

注記・抄録

博士論文

目次

  1. CONTENTS / p1 (0005.jp2)
  2. CHAPTER I / p1 (0008.jp2)
  3. INTRODUCTION / p1 (0008.jp2)
  4. 1.1 Research Background of Red-light Injection Lasers / p2 (0009.jp2)
  5. 1.2 Features of GaInAsP/AlGaAs Lasers / p15 (0022.jp2)
  6. 1.3 Purpose and Content of This Study / p16 (0023.jp2)
  7. Chapter II / p18 (0025.jp2)
  8. GROWTH CONDITIONS OF GaInAsP/AlGaAs LAYERS ON GaAs SUBSTRATES BY LPE / p18 (0025.jp2)
  9. 2.1 Introduction / p19 (0026.jp2)
  10. 2.2 Liquid Phase Epitaxial Growth Technique / p20 (0027.jp2)
  11. 2.3 Phase Equilibria in the GaInAsP/AlGaAs System / p25 (0032.jp2)
  12. 2.4 Lattice Matching Conditions / p31 (0038.jp2)
  13. 2.5 Characterization of Epitaxial Layers / p38 (0045.jp2)
  14. 2.6 Conclusion / p56 (0063.jp2)
  15. Chapter III / p57 (0064.jp2)
  16. REDUCTION OF THE THRESHOLD CURRENT DENSITY OF GaInASP/AlGaAs DOUBLE HETEROSTRUCTURE LASERS / p57 (0064.jp2)
  17. 3.1 Introduction / p58 (0065.jp2)
  18. 3.2 GaInAsP/AlGaAs DII Lasers / p60 (0067.jp2)
  19. 3.3 Threshold Current Density Reduction / p65 (0072.jp2)
  20. 3.4 Theoretical Consideration of Threshold Current Density / p71 (0078.jp2)
  21. 3.5 Conclusion / p82 (0089.jp2)
  22. Chapter IV / p83 (0090.jp2)
  23. ROOM TEMPERATURE CONTINUOUS WAVE OPERATION OF GaInAsP/AlGaAs VSIS LASERS / p83 (0090.jp2)
  24. 4.1 Introduction / p84 (0091.jp2)
  25. 4.2 Investigations on CW Operations / p85 (0092.jp2)
  26. 4.3 Fabrication of VSIS Lasers / p94 (0101.jp2)
  27. 4.4 Lasing Characteristics of VSIS Lasers / p101 (0108.jp2)
  28. 4.5 Conclusion / p108 (0115.jp2)
  29. Chapter V / p109 (0116.jp2)
  30. DESIGN, FABRICATION, AND LASING CHARACTERISTICS OF GaInAsP/AlGaAs DISTRIBUTED FEEDBACK LASERS / p109 (0116.jp2)
  31. 5.1 Introduction / p110 (0117.jp2)
  32. 5.2 Structural Design of GaInAsP/AlGaAs DFB Lasers / p111 (0118.jp2)
  33. 5.3 GaInAsP/AlGaAs DFB Lasers Grown by Two-step LPE / p125 (0132.jp2)
  34. 5.4 Ridge Waveguide Structure GaInAsP/AlGaAs DFB Lasers / p132 (0139.jp2)
  35. 5.5 Conclusion / p143 (0150.jp2)
  36. Chapter VI / p144 (0151.jp2)
  37. 670nm WAVELENGTH GaInAsP/AlGaAs VSIS-DFB LASERS / p144 (0151.jp2)
  38. 6.1 Introduction / p145 (0152.jp2)
  39. 6.2 Thermal Deformation of GaInP Gratings / p146 (0153.jp2)
  40. 6.3 Asymmetrical Waveguide Structure / p150 (0157.jp2)
  41. 6.4 GaInAsP/AlGaAs VSIS-DFB Lasers Grown by LPE and GSMBE / p155 (0162.jp2)
  42. 6.5 Conclusion / p161 (0168.jp2)
  43. Chapter VII / p162 (0169.jp2)
  44. CONCLUDING REMARKS / p162 (0169.jp2)
  45. APPENDIX / p166 (0173.jp2)
  46. A. Gain Measurements in GaInAsP/AlGaAs DH Lasers / p167 (0174.jp2)
  47. B. Facet Coatings (AR and HR) by RF-Sputtering / p177 (0184.jp2)
  48. ACKNOWLEDGMENTS / p187 (0194.jp2)
  49. REFERENCES / p190 (0197.jp2)
  50. LIST OF PUBLICATIONS / p212 (0219.jp2)
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各種コード

  • NII論文ID(NAID)
    500000074928
  • NII著者ID(NRID)
    • 8000000075127
  • DOI(NDL)
  • NDL書誌ID
    • 000000239242
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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