Studies on deep level characterization and optoelectronic device application of rapidly thermal-processed GaAs 短時間熱処理されたGaAsの深い準位の評価と光電素子への応用に関する研究
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著者
書誌事項
- タイトル
-
Studies on deep level characterization and optoelectronic device application of rapidly thermal-processed GaAs
- タイトル別名
-
短時間熱処理されたGaAsの深い準位の評価と光電素子への応用に関する研究
- 著者名
-
北川, 章夫
- 著者別名
-
キタガワ, アキオ
- 学位授与大学
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名古屋工業大学
- 取得学位
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工学博士
- 学位授与番号
-
乙第23号
- 学位授与年月日
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1991-03-15
注記・抄録
博士論文
目次
- CONTENTS / p3 (0004.jp2)
- I.INTRODUCTION / p1 (0005.jp2)
- References / p4 (0007.jp2)
- II.CHARACTERISTICS OF DEEP LEVELS IN Si-IMPLANTED GaAs LAYERS ACTIVATED BY RAPID THERMAL PROCESSING / p9 (0009.jp2)
- 2.1 Introduction / p9 (0009.jp2)
- 2.2 Experimental technique / p10 (0010.jp2)
- 2.3 Carrier concentration profiles in active layers / p11 (0010.jp2)
- 2.4 Deep levels in implanted layers / p13 (0011.jp2)
- 2.5 The thermal stability of the trap EL2 / p22 (0016.jp2)
- 2.6 Summary / p27 (0018.jp2)
- References / p27 (0018.jp2)
- III.EFFECTS OF RAPID THERMAL PROCESSING ON DEEP LEVELS IN MOLECULAR-BEAM-EPITAXIAL GaAs / p30 (0020.jp2)
- 3.1 Introduction / p30 (0020.jp2)
- 3.2 Experiment / p31 (0020.jp2)
- 3.3 Defect production by RTP / p32 (0021.jp2)
- 3.4 Annealing behavior of traps by RTP / p36 (0023.jp2)
- 3.5 Spatial variations of RTP-induced trap EL2 and N1 concentration / p38 (0024.jp2)
- 3.6 Analysis of the thermal stress in the GaAs wafers during RTP / p45 (0027.jp2)
- 3.7 Correspondence of the defect distribution with the thermal stress profile / p55 (0032.jp2)
- 3.8 Summary / p63 (0036.jp2)
- References / p64 (0037.jp2)
- IV.DISTRIBUTION OF DEEP LEVELS AND IMAGE PROCESSING FOR SEMI-INSULATING GaAs WAFERS / p67 (0038.jp2)
- 4.1 Introduction / p67 (0038.jp2)
- 4.2 Contactless measurement by the reflectance microwave probe method / p68 (0039.jp2)
- 4.3 Redistribution of defects by RTP / p72 (0041.jp2)
- 4.4 Distributions of dislocation and EL2 in LEC GaAs substrates / p77 (0043.jp2)
- 4.5 Summary / p79 (0044.jp2)
- References / p79 (0044.jp2)
- V.SPECTRAL RESPONSES OF GaAs PHOTODIODES FABRICATED BY RAPID THERMAL DIFFUSION / p81 (0045.jp2)
- 5.1 Introduction / p81 (0045.jp2)
- 5.2 Device processing for GaAs photodiodes / p82 (0046.jp2)
- 5.3 Experimental diffusion profiles / p83 (0046.jp2)
- 5.4 Characteristics of photodiodes fabricated by RTD / p87 (0048.jp2)
- 5.5 Numerical analysis of spectral responses / p93 (0051.jp2)
- 5.6 Summary / p96 (0053.jp2)
- References / p96 (0053.jp2)
- VI.CONCLUSIONS / p99 (0054.jp2)
- ACKNOWLEDGEMENTS / p103 (0056.jp2)
- ADDENDUM / p105 (0057.jp2)
- List of Publications / p105 (0057.jp2)
- List of Oral Presentations / p106 (0058.jp2)