Uniaxial stress effect on excitonic systems in Si, Ge and GaAs Si,GeとGaAs中の励起子系に対する一軸性応力効果

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著者

    • Uddin, Ashraf ウディン, アシュラフ

書誌事項

タイトル

Uniaxial stress effect on excitonic systems in Si, Ge and GaAs

タイトル別名

Si,GeとGaAs中の励起子系に対する一軸性応力効果

著者名

Uddin, Ashraf

著者別名

ウディン, アシュラフ

学位授与大学

大阪大学

取得学位

理学博士

学位授与番号

甲第4242号

学位授与年月日

1991-03-26

注記・抄録

博士論文

目次

  1. CONTENTS / p6 (0006.jp2)
  2. Abstract / p4 (0004.jp2)
  3. Preface / p5 (0005.jp2)
  4. Contents / p6 (0006.jp2)
  5. Abbreviations / p8 (0008.jp2)
  6. 1. General Introduction / p1 (0009.jp2)
  7. 1.1: Hot exciton / p2 (0010.jp2)
  8. 1.2: Impact ionization of exciton / p3 (0011.jp2)
  9. 1.3: High density electron-hole system in GaAs / p4 (0012.jp2)
  10. 2. General background of exciton system and its recombination properties / p6 (0014.jp2)
  11. 2.1: Carrier generation / p6 (0014.jp2)
  12. 2.2: Formation of exciton / p6 (0014.jp2)
  13. 2.3: Binding energy of free exciton / p7 (0015.jp2)
  14. 2.4: Exciton lifetime / p8 (0016.jp2)
  15. 2.5: Condensation of exciton / p9 (0017.jp2)
  16. 2.6: Radiative recombination of exciton / p10 (0018.jp2)
  17. 2.7: Non-radiative recombination of exciton / p10 (0018.jp2)
  18. 2.8: Far-infrared absorption of exciton / p11 (0019.jp2)
  19. 3. Stress effects on band structure / p12 (0020.jp2)
  20. 3.1: Silicon / p12 (0020.jp2)
  21. 3.2: Germanium / p13 (0021.jp2)
  22. 3.3: Gallium arsenide / p14 (0022.jp2)
  23. 3.4: Energy surface / p14 (0022.jp2)
  24. 3.5: Effective mass / p15 (0023.jp2)
  25. 4. Impact ionization of excitons and electron-hole droplets / p17 (0025.jp2)
  26. 4.1: Electric field induced impact ionization / p17 (0025.jp2)
  27. 4.2: Photocurrent due to impact ionization / p18 (0026.jp2)
  28. 4.3: Stress effect on impact ionization / p19 (0027.jp2)
  29. 5. Band structure under magnetic field / p20 (0028.jp2)
  30. 5.1: Valence and conduction bands / p20 (0028.jp2)
  31. 5.2: Zeeman splitting of exciton / p21 (0029.jp2)
  32. 6. Experimental techniques / p23 (0031.jp2)
  33. 6.1: Sample preparation / p23 (0031.jp2)
  34. 6.2: Photoluminescence measurements / p24 (0032.jp2)
  35. 6.3: Photoconductivity measurements / p25 (0033.jp2)
  36. 6.4: Far-infrared magneto-absorption measurements / p25 (0033.jp2)
  37. 7. Experimental results / p27 (0035.jp2)
  38. 7.1: Photoluminescence under uniaxial stress / p27 (0035.jp2)
  39. 7.2: Sample resistance under stress / p34 (0042.jp2)
  40. 7.3: Impact ionization of exciton and EHL under uniaxial stress / p35 (0043.jp2)
  41. 7.4: FIR magneto-absorption under stress / p39 (0047.jp2)
  42. 7.5: Photoluminescence from highly excited GaAs / p41 (0049.jp2)
  43. 8. Discussions / p45 (0053.jp2)
  44. 8.1: Decrease of FE luminescence and FIR absorption peaks intensity with stress in pure Si and Ge / p45 (0053.jp2)
  45. 8.2: Off-equilibrium population of holes in stress split valence band in pure Si and Ge / p47 (0055.jp2)
  46. 8.3: Possible electron-hole liquid in GaAs / p49 (0057.jp2)
  47. 9. Conclusions / p51 (0059.jp2)
  48. # Acknowledgements / p53 (0061.jp2)
  49. # References / p54 (0062.jp2)
  50. # Figure / (0067.jp2)
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各種コード

  • NII論文ID(NAID)
    500000075677
  • NII著者ID(NRID)
    • 8000000075876
  • DOI(NDL)
  • NDL書誌ID
    • 000000239991
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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