Growth and characterization of insulating oxide films on silicon Si上の酸化物絶縁体薄膜の形成と評価
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著者
書誌事項
- タイトル
-
Growth and characterization of insulating oxide films on silicon
- タイトル別名
-
Si上の酸化物絶縁体薄膜の形成と評価
- 著者名
-
福本, 博文
- 著者別名
-
フクモト, ヒロフミ
- 学位授与大学
-
広島大学
- 取得学位
-
工学博士
- 学位授与番号
-
甲第976号
- 学位授与年月日
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1991-03-25
注記・抄録
博士論文
目次
- Contents / p7 (0005.jp2)
- 1 Introduction / p1 (0008.jp2)
- REFERENCES / p5 (0010.jp2)
- 2 Growth of Crystalline ZrO₂ Films on Si / p7 (0011.jp2)
- 2.1 Introduction / p7 (0011.jp2)
- 2.2 Experimental Procedures / p8 (0012.jp2)
- 2.3 Results and Discussion / p9 (0012.jp2)
- 2.4 Summary / p14 (0015.jp2)
- REFERENCES / p15 (0015.jp2)
- 3 Growth of Crystalline ZrO₂-Y₂O₃ films on Si / p17 (0016.jp2)
- 3.1 Introduction / p17 (0016.jp2)
- 3.2 Experimental Procedures / p18 (0017.jp2)
- 3.3 Characterization of [化学式] Films / p20 (0018.jp2)
- 3.4 Summary / p30 (0023.jp2)
- REFERENCES / p31 (0023.jp2)
- 4 Electrical Characteristics of ZrO₂-Y₂O₃ Dielectric Films / p33 (0024.jp2)
- 4.1 Introduction / p33 (0024.jp2)
- 4.2 ZrO₂/SiO₂ Films / p34 (0025.jp2)
- 4.3 Epitaxial YSZ Films / p43 (0029.jp2)
- 4.4 Summary / p45 (0030.jp2)
- REFERENCES / p49 (0032.jp2)
- 5 Evaluation of Crystalline Quality of ZrO₂-Y₂O₃ Films on Si by Ion Beam Channeling / p51 (0033.jp2)
- 5.1 Introduction / p51 (0033.jp2)
- 5.2 Experiment / p51 (0033.jp2)
- 5.3 Channeling / p52 (0034.jp2)
- 5.4 Defect Analysis / p59 (0037.jp2)
- 5.5 Characterization of ZrO₂-Y₂O₃/Si Interface / p63 (0039.jp2)
- 5.6 Strain Measurements in YSZ Films / p67 (0041.jp2)
- 5.7 Summary / p71 (0043.jp2)
- REFERENCES / p74 (0045.jp2)
- 6 Strain Measurements of Lattice at Thin Amorphous Layer/Crystal Interface by Ion Beam Channeling / p75 (0045.jp2)
- 6.1 Introduction / p75 (0045.jp2)
- 6.2 Experimental Procedures / p76 (0046.jp2)
- 6.3 Strain of Si at SiO₂/Si Interface / p78 (0047.jp2)
- 6.4 Summary / p81 (0048.jp2)
- REFERENCES / p86 (0051.jp2)
- 7 Conclusion / p87 (0051.jp2)
- Appendix LIST OF PUBLICATIONS / p91 (0053.jp2)
