Investigation of Zn[-] and Ga[-] chalcogenide compound semiconductors and their heterostructures Zu[-]及びGa[-]カルコゲナイド化合物半導体とそれらのヘテロ構造に関する研究
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著者
書誌事項
- タイトル
-
Investigation of Zn[-] and Ga[-] chalcogenide compound semiconductors and their heterostructures
- タイトル別名
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Zu[-]及びGa[-]カルコゲナイド化合物半導体とそれらのヘテロ構造に関する研究
- 著者名
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寺口, 信明
- 著者別名
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テラグチ, ノブアキ
- 学位授与大学
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東京工業大学
- 取得学位
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工学博士
- 学位授与番号
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甲第2283号
- 学位授与年月日
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1991-03-26
注記・抄録
博士論文
資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
目次
- 論文目録
- TABLE OF CONTENTS
- Preface
- Chapter1 Overview and Objectives of This Research
- Chapter2 Some Key Features of II-VI and III-VI Compuond semiconductors,Superlattices and Growth Techniques
- 2-1 Physical Properties of II-VI Compounds
- 2-2 Physical Properties of III-VI Compounds
- 2-3 General Conceptions for Superlattices
- 2-4 Epitaxial Growth Techniques
- Chapter3 Metalorganic Molecular Beam Epitaxy of Zn-Chalocogenides
- 3-1 Introduction
- 3-2 Physical Properties of Metalorganics
- 3-3 Metalorganic Molecular Beam Epitaxy System
- 3-4 Epitaxial Growth of Zn-Chalcogenides
- 3-5 Summary
- Chapter4 Metalorganic Molecular Beam Epitaxy and Characterization of ZnS-ZnSe and ZnS-ZnTe Strained-Layer Superlattices
- 4-1 Introduction
- 4-2 Growth System and Process
- 4-3 Characterization of ZnS-ZnSe Strained-Layer Superlattices
- 4-4 Characterization of ZnS-ZnTe Strained-Layer Superlattices
- 4-5 Summary
- Chapter5 Atomic Layer Epitaxy of ZnSe Using Metalorganic Molecular Beam Epitaxy
- 5-1 Introduction
- 5-2 Growth System and Process
- 5-3 Atomic Layer Epitaxy of ZnSe
- 5-4 Best Source Combination for Atomic Layer Epitaxy
- 5-5 Summary
- Chapter6 III-VI Compound Semiconductors as a New Material for Blue-light Emitting Devices and Functional Devices
- 6-1 Introduction
- 6-2 Survey of Other Works
- 6-3 New Material for Blue-light Emitting Device
- 6-4 Pseudo-Two-Dimensional Superlattices
- 6-5 Summary
- Chapter7 Growth and Characterization of Ga-Chalcogenide Compound Semiconductors
- 7-1 Introduction
- 7-2 Growth System and Process
- 7-3 Growth of Ga-Sesquichalcogenides by Metalorganic Molecular Beam Epitaxy
- 7-4 Characterization of Ga₂Te₃
- 7-5 Growth of Ga₂Se₃ by Metalorganic Molecular Beam Epitaxy and Key Point for Epitaxy
- 7-6 Growth and Characterization of Ga₂Se₃ by Molecular Beam Epitaxy
- 7-7 Vacancy Ordering
- 7-8 Growth of Ga-Chalcogenides on Mica and SiO₂
- 7-9 Summary
- Chapter8 General Conclusions
- Acknowledgments
- References
- List of Publications