Investigation of Zn[-] and Ga[-] chalcogenide compound semiconductors and their heterostructures Zu[-]及びGa[-]カルコゲナイド化合物半導体とそれらのヘテロ構造に関する研究
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著者
書誌事項
- タイトル
-
Investigation of Zn[-] and Ga[-] chalcogenide compound semiconductors and their heterostructures
- タイトル別名
-
Zu[-]及びGa[-]カルコゲナイド化合物半導体とそれらのヘテロ構造に関する研究
- 著者名
-
寺口, 信明
- 著者別名
-
テラグチ, ノブアキ
- 学位授与大学
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東京工業大学
- 取得学位
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工学博士
- 学位授与番号
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甲第2283号
- 学位授与年月日
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1991-03-26
注記・抄録
博士論文
目次
- 論文目録 / (0002.jp2)
- TABLE OF CONTENTS / (0005.jp2)
- Preface / p1 (0004.jp2)
- Chapter1 Overview and Objectives of This Research / p1 (0007.jp2)
- Chapter2 Some Key Features of II-VI and III-VI Compuond semiconductors,Superlattices and Growth Techniques / p7 (0010.jp2)
- 2-1 Physical Properties of II-VI Compounds / p7 (0010.jp2)
- 2-2 Physical Properties of III-VI Compounds / p18 (0016.jp2)
- 2-3 General Conceptions for Superlattices / p27 (0020.jp2)
- 2-4 Epitaxial Growth Techniques / p35 (0024.jp2)
- Chapter3 Metalorganic Molecular Beam Epitaxy of Zn-Chalocogenides / p47 (0030.jp2)
- 3-1 Introduction / p47 (0030.jp2)
- 3-2 Physical Properties of Metalorganics / p48 (0031.jp2)
- 3-3 Metalorganic Molecular Beam Epitaxy System / p52 (0033.jp2)
- 3-4 Epitaxial Growth of Zn-Chalcogenides / p55 (0034.jp2)
- 3-5 Summary / p64 (0039.jp2)
- Chapter4 Metalorganic Molecular Beam Epitaxy and Characterization of ZnS-ZnSe and ZnS-ZnTe Strained-Layer Superlattices / p65 (0039.jp2)
- 4-1 Introduction / p65 (0039.jp2)
- 4-2 Growth System and Process / p67 (0040.jp2)
- 4-3 Characterization of ZnS-ZnSe Strained-Layer Superlattices / p71 (0042.jp2)
- 4-4 Characterization of ZnS-ZnTe Strained-Layer Superlattices / p84 (0049.jp2)
- 4-5 Summary / p93 (0053.jp2)
- Chapter5 Atomic Layer Epitaxy of ZnSe Using Metalorganic Molecular Beam Epitaxy / p95 (0054.jp2)
- 5-1 Introduction / p95 (0054.jp2)
- 5-2 Growth System and Process / p96 (0055.jp2)
- 5-3 Atomic Layer Epitaxy of ZnSe / p97 (0055.jp2)
- 5-4 Best Source Combination for Atomic Layer Epitaxy / p110 (0062.jp2)
- 5-5 Summary / p113 (0063.jp2)
- Chapter6 III-VI Compound Semiconductors as a New Material for Blue-light Emitting Devices and Functional Devices / p115 (0064.jp2)
- 6-1 Introduction / p115 (0064.jp2)
- 6-2 Survey of Other Works / p116 (0065.jp2)
- 6-3 New Material for Blue-light Emitting Device / p129 (0071.jp2)
- 6-4 Pseudo-Two-Dimensional Superlattices / p138 (0076.jp2)
- 6-5 Summary / p141 (0077.jp2)
- Chapter7 Growth and Characterization of Ga-Chalcogenide Compound Semiconductors / p143 (0078.jp2)
- 7-1 Introduction / p143 (0078.jp2)
- 7-2 Growth System and Process / p144 (0079.jp2)
- 7-3 Growth of Ga-Sesquichalcogenides by Metalorganic Molecular Beam Epitaxy / p147 (0080.jp2)
- 7-4 Characterization of Ga₂Te₃ / p154 (0084.jp2)
- 7-5 Growth of Ga₂Se₃ by Metalorganic Molecular Beam Epitaxy and Key Point for Epitaxy / p163 (0088.jp2)
- 7-6 Growth and Characterization of Ga₂Se₃ by Molecular Beam Epitaxy / p166 (0090.jp2)
- 7-7 Vacancy Ordering / p171 (0092.jp2)
- 7-8 Growth of Ga-Chalcogenides on Mica and SiO₂ / p175 (0094.jp2)
- 7-9 Summary / p186 (0100.jp2)
- Chapter8 General Conclusions / p187 (0100.jp2)
- Acknowledgments / p195 (0104.jp2)
- References / p197 (0105.jp2)
- List of Publications / p205 (0109.jp2)
