Computer simulation of amorphous Pd[80]Si[20] irradiated by ions with energies extending to 5 keV アモルフォスPd[80]Si[20]における5keVイオン照射の計算機シミュレーション
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Bibliographic Information
- Title
-
Computer simulation of amorphous Pd[80]Si[20] irradiated by ions with energies extending to 5 keV
- Other Title
-
アモルフォスPd[80]Si[20]における5keVイオン照射の計算機シミュレーション
- Author
-
岡本, 芳浩
- Author(Another name)
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オカモト, ヨシヒロ
- University
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東京工業大学
- Types of degree
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工学博士
- Grant ID
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甲第2308号
- Degree year
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1991-03-26
Note and Description
博士論文
Table of Contents
- 論文目録 / (0002.jp2)
- Contents / (0004.jp2)
- 1.Introduction / p1 (0005.jp2)
- 2.Experimental / p6 (0010.jp2)
- 2.1 Preparation of amorphous alloy / p6 (0010.jp2)
- 2.2 Irradiation experiments / p11 (0015.jp2)
- 2.3 X-ray diffraction(XRD) / p16 (0020.jp2)
- 2.4 Small angle x-ray seattering(SAXS) / p20 (0024.jp2)
- 2.5 Extended x-ray absorption fine structure (EXAFS) / p23 (0027.jp2)
- 2.6 Conclusion / p38 (0042.jp2)
- 3.The structure of amorphous Pd₈₀Si₂₀ alloy / p40 (0044.jp2)
- 3.1 Structural models / p40 (0044.jp2)
- 3.2 Molecular dynamics(MD) simulation / p45 (0049.jp2)
- 3.3 Reverse Monte Carlo(RMC) simulation / p56 (0060.jp2)
- 3.4 Conclusion / p66 (0070.jp2)
- 4.Radiation damage in amorphous Pd₈₀Si₂₀ alloy / p68 (0072.jp2)
- 4.1 Heavy ion irradiation on the surface / p68 (0072.jp2)
- 4.2 γ-ray irradiation / p76 (0080.jp2)
- 4.3 Light ion irradiation in the bulk of the sample / p81 (0085.jp2)
- 4.4 Conclusion / p88 (0092.jp2)
- 5.Radiation damage simulations / p89 (0093.jp2)
- 5.1 Simulation with low energies(25～300eV) / p89 (0093.jp2)
- 5.2 Simulation with 1.0 and 2.0keV / p109 (0113.jp2)
- 5.3 Simulation with energy extending to 5keV / p120 (0124.jp2)
- 5.4 Conclusion / p132 (0136.jp2)
- 6.Conclusion / p134 (0138.jp2)
- 7.Acknoledgment / p137 (0141.jp2)
