Stabilization of transverse mode and polarization of GaAlAs/GaAs surface emitting laser GaAlAs/GaAs面発光レーザの横モードと偏波の制御

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著者

    • 清水, 三聡 シミズ, ミツアキ

書誌事項

タイトル

Stabilization of transverse mode and polarization of GaAlAs/GaAs surface emitting laser

タイトル別名

GaAlAs/GaAs面発光レーザの横モードと偏波の制御

著者名

清水, 三聡

著者別名

シミズ, ミツアキ

学位授与大学

東京工業大学

取得学位

工学博士

学位授与番号

甲第2316号

学位授与年月日

1991-03-26

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. Contents / (0004.jp2)
  3. Chapter1 Introduction / p1 (0007.jp2)
  4. 1.1 Optical Industry and Role of Semiconductor Laser Diodes / p1 (0007.jp2)
  5. 1.2 Surface Emitting Laser / p6 (0012.jp2)
  6. 1.3 The Purpose of This Study and Content of This Thesis / p9 (0015.jp2)
  7. Chapter2 Design Consideration of GaAlAs/GaAs Surface Emitting Laser / p25 (0031.jp2)
  8. 2.1 Basic Structure / p26 (0032.jp2)
  9. 2.2 Threshold Current Density and Differential Quantum Efficiency / p28 (0034.jp2)
  10. 2.3 Design of GaAlAs/GaAs Surface Emitting Laser / p33 (0039.jp2)
  11. Chapter3 Transverse Mode Analysis by BPM Simulation / p40 (0046.jp2)
  12. 3.1 Advantage of BPM Simulation / p41 (0047.jp2)
  13. 3.2 Algorithm of BPM / p42 (0048.jp2)
  14. Chapter4 Single Transverse Mode Condition of Surface Emitting Lasers / p46 (0052.jp2)
  15. 4.1 Field Distribution in the Cavity / p47 (0053.jp2)
  16. 4.2 Diffraction Losses and Threshold Current Density / p48 (0054.jp2)
  17. Chapter5 Self-consistent Analysis for Single Mode Operation / p57 (0063.jp2)
  18. 5.1 Calculation Mode and Algorithm / p59 (0065.jp2)
  19. 5.2 Calculation of Resonant Mode by BPM / p62 (0068.jp2)
  20. 5.3 Calculation of Carrier Distribution / p66 (0072.jp2)
  21. 5.4 Simulation Result / p68 (0074.jp2)
  22. Chapter6 Polarization and its Control Methods / p87 (0093.jp2)
  23. 6.1 Polarization Characteristics of MOCVD grown CBH Surface Emitting Lasers / p88 (0094.jp2)
  24. 6.2 Selectivity of Polarization State / p90 (0096.jp2)
  25. 6.3 Polarization Control Surface Emitting Laser / p91 (0097.jp2)
  26. Chapter7 Fabrication of GaAlAs/GaAs Surface Emitting Lasers by MOCVD / p104 (0110.jp2)
  27. 7.1 GaAlAs/GaAs MOCVD Growth of DH Wafer / p106 (0112.jp2)
  28. 7.2 Regrowth of Blocking Layers by MOCVD / p110 (0116.jp2)
  29. 7.3 Fabrication of CBH SE Laser / p111 (0117.jp2)
  30. Chapter8 Transverse Mode and Polarization Controlled CBH Surface Emitting Lasers / p124 (0130.jp2)
  31. 8.1 Confirmation of Single Transverse Mode Operation / p125 (0131.jp2)
  32. 8.2 Fabrication Process of Polarization Controlled SE Lasers / p126 (0132.jp2)
  33. 8.3 Polarization Characteristics / p127 (0133.jp2)
  34. Chapter9 Conclusions / p137 (0143.jp2)
  35. Acknowledgments / (0146.jp2)
  36. Publication list / p1 (0148.jp2)
  37. 博士論文要旨 / (0149.jp2)
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各種コード

  • NII論文ID(NAID)
    500000077991
  • NII著者ID(NRID)
    • 8000000078195
  • DOI(NDL)
  • NDL書誌ID
    • 000000242305
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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