Researches on processing technology of GaAs MESFET and its application to integrated circuits GaAsショットキゲート電界効果トランジスタのプロセス技術とその集積回路への応用に関する研究

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Author

    • 内富, 直隆 ウチトミ, ナオタカ

Bibliographic Information

Title

Researches on processing technology of GaAs MESFET and its application to integrated circuits

Other Title

GaAsショットキゲート電界効果トランジスタのプロセス技術とその集積回路への応用に関する研究

Author

内富, 直隆

Author(Another name)

ウチトミ, ナオタカ

University

東京工業大学

Types of degree

工学博士

Grant ID

乙第2061号

Degree year

1990-05-31

Note and Description

博士論文

Table of Contents

  1. 論文目録 / (0002.jp2)
  2. TABLE OF CONTENTS / p5 (0008.jp2)
  3. ABSTRACT / p2 (0005.jp2)
  4. TABLE OF CONTENTS / p5 (0008.jp2)
  5. LIST OF FIGURES / p9 (0012.jp2)
  6. LIST OF TABLES / p18 (0021.jp2)
  7. ACKNOWLEDGMENTS / p19 (0022.jp2)
  8. CHAPTER 1 INTRODUCTION / p1 (0024.jp2)
  9. 1.1 Historical Review of GaAs Digital IC Technology / p1 (0024.jp2)
  10. 1.2 Purposes of This Thesis / p4 (0027.jp2)
  11. CHAPTER 2 TECHNOLOGICAL BACKGROUND OF GaAs DIGITAL IC PROCESSING / p6 (0029.jp2)
  12. 2.1 Introduction / p6 (0029.jp2)
  13. 2.2 Problems in GaAs Digital IC Processing / p7 (0030.jp2)
  14. 2.3 Noise Margin for DCFL Circuit / p22 (0045.jp2)
  15. CHAPTER 3 GATE MATERIALS FOR GaAs MESFETs / p35 (0058.jp2)
  16. 3.1 Refractory WNⅹ-GaAs System / p35 (0058.jp2)
  17. 3.2 Reactive Pt-GaAs System / p71 (0094.jp2)
  18. CHAPTER 4 IMPLANTED CHANNEL FORMATION OF GaAs MESFETs / p91 (0114.jp2)
  19. 4.1 Introduction / p91 (0114.jp2)
  20. 4.2 Thermal Wave Characterization of Si⁺ Implanted GaAs / p92 (0115.jp2)
  21. 4.3 Channel Formation by Si⁺ ion implantation / p116 (0139.jp2)
  22. 4.4 Highly Uniform Ion Implants by Wafer Rotation / p133 (0156.jp2)
  23. CHAPTER 5 CHARACTERIZATION OF REFRACTORY METAL FILMS ON GaAs SUBSTRATES USING THERMAL WAVE MEASUREMENTS / p145 (0168.jp2)
  24. 5.1 Introduction / p145 (0168.jp2)
  25. 5.2 Experimental Procedures / p146 (0169.jp2)
  26. 5.3 Characterization of Sputtered W and WNⅹ Films / p147 (0170.jp2)
  27. 5.4 Characterization of LPCVD WSiⅹ Film / p154 (0177.jp2)
  28. 5.5 Summary / p159 (0182.jp2)
  29. CHAPTER 6 APPLICATION OF WNⅹ GATE SELF-ALIGNED GaAs MESFETs TO GaAs INTEGRATED CIRCUITS / p161 (0184.jp2)
  30. 6.1 Introduction / p161 (0184.jp2)
  31. 6.2 Outline of 1 K Gate Gate Array / p161 (0184.jp2)
  32. 6.3 Fabrication Process / p164 (0187.jp2)
  33. 6.4 Basic Gate Performance / p165 (0188.jp2)
  34. 6.5 Application to ALU Circuit / p168 (0191.jp2)
  35. CHAPTER 7 SUMMARY AND CONCLUDING REMARKS / p173 (0196.jp2)
  36. REFERENCES / p177 (0200.jp2)
  37. LIST OF PUBLICATIONS AND PRESENTATIONS / p186 (0209.jp2)
6access

Codes

  • NII Article ID (NAID)
    500000078048
  • NII Author ID (NRID)
    • 8000000078252
  • DOI(NDL)
  • NDLBibID
    • 000000242362
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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