Growth and evaluation of gallium arsenide single crystals for electron devices 電子デバイス用ヒ化ガリウム単結晶の育成と評価

この論文をさがす

著者

    • 折戸, 文夫 オリト, フミオ

書誌事項

タイトル

Growth and evaluation of gallium arsenide single crystals for electron devices

タイトル別名

電子デバイス用ヒ化ガリウム単結晶の育成と評価

著者名

折戸, 文夫

著者別名

オリト, フミオ

学位授与大学

東京工業大学

取得学位

工学博士

学位授与番号

乙第2155号

学位授与年月日

1991-01-31

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. Contents / p1 (0004.jp2)
  3. Chapter1 Introduction / p1 (0011.jp2)
  4. 1.1 III-V Compound Semiconductors / p1 (0011.jp2)
  5. 1.2 Purpose of This Study / p3 (0012.jp2)
  6. 1.3 Defects and Impurities in Gallium Arsenide / p5 (0013.jp2)
  7. 1.4 Outline of This Study / p8 (0015.jp2)
  8. Chapter2 Silicon-doped Gallium Arsenide Single Crystals Grown by the Liquid Encapsulated Czochralski Method / p13 (0017.jp2)
  9. 2.1 Introduction / p13 (0017.jp2)
  10. 2.2 Low Temperature Gradient LEC Crystal Growth / p14 (0018.jp2)
  11. 2.3 Crystalline Perfection / p15 (0018.jp2)
  12. 2.4 Impurity Analysis / p20 (0021.jp2)
  13. 2.5 Device Performance / p24 (0023.jp2)
  14. 2.6 Conclusion / p26 (0024.jp2)
  15. Chapter3 Chromium-doped Semi-Insulating Gallium Arsenide Single Crystals Grown by the Gradient Freeze Method / p29 (0025.jp2)
  16. 3.1 Introduction / p29 (0025.jp2)
  17. 3.2 Gradient Freeze Crystal Growth / p30 (0026.jp2)
  18. 3.3 Crystal Evaluation / p33 (0027.jp2)
  19. 3.4 Residual Impurities in Undoped Crystals / p35 (0028.jp2)
  20. 3.5 Impurity Distribution in Chromium-doped Crystal / p40 (0031.jp2)
  21. 3.6 Photoluminescence Study / p43 (0032.jp2)
  22. 3.7 Conclusion / p50 (0036.jp2)
  23. Chapter4 Role of Residual Carbon in Undoped Semi-insulating Gallium Arsenide Grown by the Liquid Encapsu-lated Czochralski Method / p53 (0037.jp2)
  24. 4.1 Introduction / p53 (0037.jp2)
  25. 4.2 Direct Synthesized LEC Crystal Growth / p54 (0038.jp2)
  26. 4.3 Impurity Analysis / p60 (0041.jp2)
  27. 4.4 Sheet Carrier Concentration Measurement / p62 (0042.jp2)
  28. 4.5 Results and Discussion / p66 (0044.jp2)
  29. 4.6 Conclusion / p73 (0048.jp2)
  30. Chapter5 Large Size Dislocation-free Gallium Arsenide Sin-gle Crystals for LSI Application / p77 (0050.jp2)
  31. 5.1 Introduction / p77 (0050.jp2)
  32. 5.2 VM-FEC Crystal Growth / p78 (0051.jp2)
  33. 5.3 Crystalline Perfection / p81 (0052.jp2)
  34. 5.4 Impurity Analysis / p81 (0052.jp2)
  35. 5.5 Sheet Carrier Concentration / p83 (0053.jp2)
  36. 5.6 Conclusion / p90 (0057.jp2)
  37. Chapter6 Effect of EL2-defect on Activation of Silicon Im-planted into Undoped Semi-insulating Gallium Ar-senide Crystal / p92 (0058.jp2)
  38. 6.1 Introduction / p92 (0058.jp2)
  39. 6.2 Crystal Growth / p93 (0058.jp2)
  40. 6.3 EL2 Concentration Measurement / p94 (0059.jp2)
  41. 6.4 Crystal Evaluation / p94 (0059.jp2)
  42. 6.5 EL2-defect Control / p96 (0060.jp2)
  43. 6.6 Effect of EL2-defect / p98 (0061.jp2)
  44. 6.7 Conclusion / p105 (0064.jp2)
  45. Chapter7 Effect of Boron on Activation of Silicon Implanted into Undoped Semi-insulating Gallium Arsenide Crystal / p108 (0066.jp2)
  46. 7.1 Introduction / p108 (0066.jp2)
  47. 7.2 Crystal Growth / p109 (0066.jp2)
  48. 7.3 Crystal Evaluation / p110 (0067.jp2)
  49. 7.4 Results and Discussion / p110 (0067.jp2)
  50. 7.5 Conclusion / p116 (0070.jp2)
  51. Chapter8 Formation and Behavior of [化学式] Complex De-fects in Gallium Arsenide Grown by the Liquid Encapsulated Czochralski Method / p118 (0071.jp2)
  52. 8.1 Introduction / p118 (0071.jp2)
  53. 8.2 Crystal Growth and Annealing / p119 (0071.jp2)
  54. 8.3 Crystal Evaluation / p119 (0071.jp2)
  55. 8.4 Results and Discussion / p120 (0072.jp2)
  56. 8.5 Conclusion / p127 (0075.jp2)
  57. Chapter9 Improved Uniformity in Undoped Semi-insulating Gallium Arsenide Single Crystals for IC Substrates / p130 (0077.jp2)
  58. 9.1 Introduction / p130 (0077.jp2)
  59. 9.2 Sheet Resistivity Evaluation / p131 (0077.jp2)
  60. 9.3 Substrate Preparation / p132 (0078.jp2)
  61. 9.4 Sheet Resistivity Uniformity / p132 (0078.jp2)
  62. 9.5 Conclusion / p139 (0081.jp2)
  63. Chapter10 Concluding Remarks / p142 (0083.jp2)
  64. 10.1 General Discussion / p142 (0083.jp2)
  65. 10.2 Summary / p148 (0086.jp2)
0アクセス

各種コード

  • NII論文ID(NAID)
    500000078142
  • NII著者ID(NRID)
    • 8000000078346
  • DOI(NDL)
  • NDL書誌ID
    • 000000242456
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
ページトップへ