Metalorganic molecular beam epitaxial growth and characterization of ZnSe-based Ⅱ-Ⅵ semiconductors 有機金属分子線エピタキシー法によるZnSe系Ⅱ-Ⅵ族半導体の成長とその評価に関する研究

この論文をさがす

著者

    • 呉, 義宏 ウー, イーホン

書誌事項

タイトル

Metalorganic molecular beam epitaxial growth and characterization of ZnSe-based Ⅱ-Ⅵ semiconductors

タイトル別名

有機金属分子線エピタキシー法によるZnSe系Ⅱ-Ⅵ族半導体の成長とその評価に関する研究

著者名

呉, 義宏

著者別名

ウー, イーホン

学位授与大学

京都大学

取得学位

工学博士

学位授与番号

甲第4901号

学位授与年月日

1991-09-24

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. CONTENTS / p2 (0007.jp2)
  3. I INTRODUCTION / p1 (0008.jp2)
  4. 1-1 II-VI semiconductor ZnSe / p1 (0008.jp2)
  5. 1-2 ZnSe-based strained-layer quantum wells and superlattices / p2 (0009.jp2)
  6. 1-3 Objectives of this study / p4 (0010.jp2)
  7. References / p6 (0011.jp2)
  8. II METALORGANIC MOLECULAR BEAM EPITAXY OF ZnSe / p8 (0012.jp2)
  9. 2-1 Introduction / p8 (0012.jp2)
  10. 2-2 Experimental details / p11 (0013.jp2)
  11. 2-3 Characterization of MOMBE ZnSe on GaAs / p20 (0018.jp2)
  12. 2-4 Summary / p22 (0019.jp2)
  13. References / p23 (0019.jp2)
  14. III A COMPARATIVE STUDY OF ZnSe GROWTH ON THERMALLY ETCHED AND[化学式]-TREATED(001)-ORIENTED GaAs SUBSTRATE / p24 (0020.jp2)
  15. 3-1 Introduction / p24 (0020.jp2)
  16. 3-2 Initial stage of ZnSe growth / p26 (0021.jp2)
  17. 3-3 Influences of surface microstructures of[化学式]-treated GaAs on growth rate of ZnSe / p31 (0023.jp2)
  18. 3-4 Crystalline properties of ZnSe epilayers / p36 (0026.jp2)
  19. 3-5 Electrical properties of pseudomorphic ZnSe/GaAs heterointerfaces / p40 (0028.jp2)
  20. 3-6 Pretreatment of GaAs substrate using H₂S / p50 (0033.jp2)
  21. 3-7 Summary / p53 (0034.jp2)
  22. References / p55 (0035.jp2)
  23. IV GROWTH AND CHARACTERIZATION OF ZnS,ZnSSe,CdSe AND ZnCdSe / p57 (0036.jp2)
  24. 4-1 Introduction / p57 (0036.jp2)
  25. 4-2 Growth and properties of ZnS on GaAs / p57 (0036.jp2)
  26. 4-3 Growth of ZnS and ZnSSe on pseudomorphic ZnSe buffers / p59 (0037.jp2)
  27. 4-4 Growth and properties of CdSe / p64 (0040.jp2)
  28. 4-5 Growth and properties of ZnCdSe / p66 (0041.jp2)
  29. 4-6 Summary / p72 (0044.jp2)
  30. References / p72 (0044.jp2)
  31. V STRUCTURAL DESIGN AND BAND LINEUP ESTIMATION OF PSEUDOMORPHIC[化学式]/[化学式] STRAINED-LAYER QUANTUM WELLS ON GaAs / p73 (0044.jp2)
  32. 5-1 Introduction / p73 (0044.jp2)
  33. 5-2 Historical survey / p73 (0044.jp2)
  34. 5-3 Structural design / p77 (0046.jp2)
  35. 5-4 Estimation of band lineups / p86 (0051.jp2)
  36. 5-5 Summary / p92 (0054.jp2)
  37. References / p92 (0054.jp2)
  38. VI GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC[化学式]/[化学式]STRAINED-LAYER QUANTUM WELLS AND SUPERLATTICES ON GaAs / p94 (0055.jp2)
  39. 6-1 Introduction / p94 (0055.jp2)
  40. 6-2 Growth of ZnSe/ZnSSe and CdSe/ZnSe short-period strained-layer superlattices under in situ RHEED monitoring / p95 (0055.jp2)
  41. 6-3 CdSe/ZnSe/ZnSSe separate confinement single quantum wells / p102 (0059.jp2)
  42. 6-4 ZnSe/ZnSSe and ZnCdSe/ZnSSe single quantum wells / p112 (0064.jp2)
  43. 6-5 ZnCdSe/ZnSSe multiple quantum wells / p136 (0076.jp2)
  44. 6-6 Stimulated emissions / p144 (0080.jp2)
  45. 6-7 Summary / p151 (0083.jp2)
  46. References / p152 (0084.jp2)
  47. VII CONCLUSIONS / p154 (0085.jp2)
  48. ADDENDUM / p157 (0086.jp2)
0アクセス

各種コード

  • NII論文ID(NAID)
    500000080699
  • NII著者ID(NRID)
    • 8000000080906
  • DOI(NDL)
  • NDL書誌ID
    • 000000245013
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
ページトップへ