Development of in situ processing techniques using focused ion beam 集束イオンビームによるその場加工技術の開発に関する研究

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ABSTRACT / p6 (0007.jp2)
Contents / p8 (0008.jp2)
Acknowledgement / p2 (0003.jp2)
CHAPTER1 Introduction / p10 (0009.jp2)
CHAPTER2 Ion Beam Assisted Etching / p21 (0015.jp2)
2.1 Introduction / p21 (0015.jp2)
2.2 Experimental / p21 (0015.jp2)
2.3 Gas Pressure dependence / p23 (0016.jp2)
2.4 Effect of H₂ Addition / p23 (0016.jp2)
2.5 Influence of Incident Ion Mass / p25 (0017.jp2)
2.6 Effect of Incident Angle / p26 (0018.jp2)
2.7 In situ XPS Measurement / p27 (0018.jp2)
2.8 Theoretical model / p29 (0019.jp2)
2.9 Surface Analysis / p31 (0020.jp2)
2.10 Patterning and Simulation / p33 (0021.jp2)
2.11 Summary / p35 (0022.jp2)
CHAPTER3 Ion Beam Induced Deposition / p38 (0024.jp2)
3.1 Introduction / p38 (0024.jp2)
3.2 Experimental / p38 (0024.jp2)
3.3 In-situ XPS Measurement / p40 (0025.jp2)
3.4 Ion Beam Induced Deposition of Tungsten film on GaAs / p46 (0028.jp2)
3.5 Summary / p51 (0031.jp2)
CHAPTER4 In Situ MBE overgrowth of GaAs QW on the Substrates patterned by FIB / p53 (0032.jp2)
4.1 Introduction / p53 (0032.jp2)
4.2 Growth of GaAs QW on the InGaAs patterned by FIB / p53 (0032.jp2)
4.3 Growth of GaAs QW on the GaAs implanted by Focused Si Beam / p71 (0041.jp2)
4.4 Summary / p82 (0047.jp2)
CHAPTER5 Selective Formation of 2DEG Using FIB Implantation and MBE Overgrowth / p84 (0048.jp2)
5.1 Introduction / p84 (0048.jp2)
5.2 Experimental / p85 (0049.jp2)
5.3 Low Temperature Transport Measurement / p87 (0050.jp2)
5.4 Summary / p90 (0051.jp2)
CHAPTER6 Conclusion / p92 (0052.jp2)

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