Epitaxial growth of GaAs on Si substrate by metalorganic chemical vapor deposition 有機金属化学気相成長法によるシリコン基板上へのガリウム砒素エピタキシャル成長

Access this Article

Search this Article

Author

    • 西村, 隆司 ニシムラ, タカシ

Bibliographic Information

Title

Epitaxial growth of GaAs on Si substrate by metalorganic chemical vapor deposition

Other Title

有機金属化学気相成長法によるシリコン基板上へのガリウム砒素エピタキシャル成長

Author

西村, 隆司

Author(Another name)

ニシムラ, タカシ

University

大阪大学

Types of degree

工学博士

Grant ID

乙第5567号

Degree year

1991-12-12

Note and Description

博士論文

Table of Contents

  1. ABSTRACT / p1 (0003.jp2)
  2. CONTENTS / p3 (0005.jp2)
  3. CHAPTER 1 GENERAL INTRODUCTION / p1 (0008.jp2)
  4. References / p7 (0014.jp2)
  5. CHAPTER 2 DISLOCATION REDUCTION OF GaAs-on-Si / p8 (0015.jp2)
  6. 2.1 Reduction of Dislocation Density in GaAs-on-Si by Strained-layer Superlattice(SLS) of In[化学式]Ga₁₋[化学式]As-GaAs[化学式]P₁₋[化学式] / p8 (0015.jp2)
  7. 2.2 Dislocation Reduction by Thermal Cyclic Annealing(TCA) / p18 (0025.jp2)
  8. 2.3 Dislocation Reduction by The Combination of SLS and TCA / p22 (0029.jp2)
  9. 2.4 Conclusion / p26 (0033.jp2)
  10. References / p27 (0034.jp2)
  11. CHAPTER 3 GaAs-on-Si LAYER GROWN BY SPECIFICALLY DESIGNED MOCVD SYSTEM / p28 (0035.jp2)
  12. 3.1 Introduction:Two-Reactor MOCVD System Specifically Designed for GaAs-on-Si Growth / p28 (0035.jp2)
  13. 3.2 Experimental / p31 (0038.jp2)
  14. 3.3 Results and Discussion / p31 (0038.jp2)
  15. 3.4 Conclusion / p35 (0042.jp2)
  16. References / p37 (0044.jp2)
  17. CHAPTER 4 REDUCTION OF THERMAL STRESS / p38 (0045.jp2)
  18. 4.1 Background / p38 (0045.jp2)
  19. 4.2 Growth Condition for Single Domain GaAs Layer on SOS / p40 (0047.jp2)
  20. 4.3 Crystal Characteristics of GaAs-on-SOS / p44 (0051.jp2)
  21. 4.4 Dislocation Reduction of GaAs-on-SOS / p50 (0057.jp2)
  22. 4.5 Conclusion / p53 (0060.jp2)
  23. References / p54 (0061.jp2)
  24. CHAPTER 5 AN APPROACH TO CRACK FREE GaAs-on-Si:Surface morphology improvement of GaAs-on-Si using the 2-Reactor MOCVD system and an AlAs/GaAs low temperature buffer layer / p55 (0062.jp2)
  25. 5.1 Introduction / p55 (0062.jp2)
  26. 5.2 Experimental / p56 (0063.jp2)
  27. 5.3 Results and Discussion / p56 (0063.jp2)
  28. 5.4 Conclusion / p61 (0068.jp2)
  29. References / p63 (0070.jp2)
  30. CHAPTER 6 CRACK FREE AND LOW DISLOCATION DENSITY GaAs-on-Si GROWN BY 2-REACTOR MOCVD SYSTEM / p64 (0071.jp2)
  31. 6.1 Introduction / p64 (0071.jp2)
  32. 6.2 Experimental / p66 (0073.jp2)
  33. 6.3 Results and discussion / p69 (0076.jp2)
  34. 6.4 Conclusion / p74 (0081.jp2)
  35. References / p75 (0082.jp2)
  36. SUMMARY / p76 (0083.jp2)
  37. ACKNOWLEDGMENTS / p78 (0085.jp2)
  38. APPENDIX I / p79 (0086.jp2)
9access

preview

Codes

  • NII Article ID (NAID)
    500000081171
  • NII Author ID (NRID)
    • 8000000081379
  • DOI(NDL)
  • Text Lang
    • und
  • NDLBibID
    • 000000245485
  • Source
    • Institutional Repository
    • NDL ONLINE
    • NDL Digital Collections

Export

Page Top