Study on degradation mechanism in Ⅲ-Ⅴ semiconductor opto-electronic devices Ⅲ-Ⅴ族混晶半導体を用いた光半導体デバイスの劣化機構に関する研究

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著者

    • 上田, 修 ウエダ, オサム

書誌事項

タイトル

Study on degradation mechanism in Ⅲ-Ⅴ semiconductor opto-electronic devices

タイトル別名

Ⅲ-Ⅴ族混晶半導体を用いた光半導体デバイスの劣化機構に関する研究

著者名

上田, 修

著者別名

ウエダ, オサム

学位授与大学

東京大学

取得学位

工学博士

学位授与番号

乙第9927号

学位授与年月日

1990-12-13

注記・抄録

博士論文

目次

  1. Table of contents / (0003.jp2)
  2. Chapter1 Introduction / p1 (0007.jp2)
  3. 1.1 Background-development of optical devices / p1 (0007.jp2)
  4. 1.2 Degradation of optical devices / p1 (0007.jp2)
  5. 1.3 Purpose and abstract of this study / p4 (0009.jp2)
  6. References / p6 (0010.jp2)
  7. Chapter2 Experimental procedure / p8 (0011.jp2)
  8. 2.1 Introduction / p8 (0011.jp2)
  9. 2.2 Preparation of materials by LPE / p8 (0011.jp2)
  10. 2.3 Structure of optical devices / p9 (0011.jp2)
  11. 2.4 Fabrication processes of devices / p16 (0015.jp2)
  12. 2.5 Device characteristics / p19 (0016.jp2)
  13. 2.6 Life testing of devices / p22 (0018.jp2)
  14. 2.7 Characterization of defects in LPE crystals and degraded devices / p22 (0018.jp2)
  15. References / p30 (0022.jp2)
  16. Chapter3 Defects in LPE crystals / p31 (0022.jp2)
  17. 3.1 Introduction / p31 (0022.jp2)
  18. 3.2 Growth-induced defects / p32 (0023.jp2)
  19. 3.3 Process-induced defects / p73 (0043.jp2)
  20. 3.4 Summary / p82 (0048.jp2)
  21. References / p85 (0049.jp2)
  22. Chapter4 Rapid degradation / p89 (0051.jp2)
  23. 4.1 Introductioon / p89 (0051.jp2)
  24. 4.2 Rapid degradation in GaAlAs/GaAs optical devices / p89 (0051.jp2)
  25. 4.3 Rapid degradation in InGaAsP/InP optical devices / p110 (0062.jp2)
  26. 4.4 Rapid degradation in InGaAsP/InGaP optical devices / p123 (0068.jp2)
  27. 4.5 Comparison of recombination-enhanced defect reaction in different III-V materials / p135 (0074.jp2)
  28. 4.6 Elimination of the rapid degradation / p141 (0077.jp2)
  29. 4.7 Summary / p141 (0077.jp2)
  30. References / p145 (0079.jp2)
  31. Chapter5 Gradual degradation / p150 (0082.jp2)
  32. 5.1 Introduction / p150 (0082.jp2)
  33. 5.2 Gradual degradation in GaAlAs DH LED's / p150 (0082.jp2)
  34. 5.3 Gradual degradation in InGaAsP/InP DH LED's / p158 (0086.jp2)
  35. 5.4 Comparison of the gradual degradation in GaAlAs/GaAs and InGaAsP/InP / p164 (0089.jp2)
  36. 5.5 Enhancement of gradual degradation by internal stress in GaAlAs visible lasers / p164 (0089.jp2)
  37. 5.6 Summary / p172 (0093.jp2)
  38. References / p175 (0094.jp2)
  39. Chapter6 Catastrophic failure / p177 (0095.jp2)
  40. 6.1 Introduction / p177 (0095.jp2)
  41. 6.2 Catastrophic failure in lasers / p177 (0095.jp2)
  42. 6.3 Catastrophic degradation in LED's / p209 (0111.jp2)
  43. 6.4 Elimination of catastrophic degradation / p226 (0120.jp2)
  44. 6.5 Summary / p228 (0121.jp2)
  45. References / p231 (0122.jp2)
  46. Chapter7 Conclusions / p233 (0123.jp2)
  47. Acknowledgement / p239 (0126.jp2)
  48. List of publications and conference presentations / p241 (0127.jp2)
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各種コード

  • NII論文ID(NAID)
    500000083254
  • NII著者ID(NRID)
    • 8000000083464
  • DOI(NDL)
  • NDL書誌ID
    • 000000247568
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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