Characterization of Ⅲ-V compound semiconductor interfaces by X-ray photoelectron spectroscopy 光電子分光法によるⅢ-V族化合物半導体界面の評価

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著者

    • 石井, 宏辰 イシイ, ヒロタツ

書誌事項

タイトル

Characterization of Ⅲ-V compound semiconductor interfaces by X-ray photoelectron spectroscopy

タイトル別名

光電子分光法によるⅢ-V族化合物半導体界面の評価

著者名

石井, 宏辰

著者別名

イシイ, ヒロタツ

学位授与大学

北海道大学

取得学位

工学博士

学位授与番号

甲第3041号

学位授与年月日

1992-03-25

注記・抄録

博士論文

目次

  1. CONTENTS / p3 (0005.jp2)
  2. Acknowledgements / p1 (0003.jp2)
  3. Contents / p3 (0005.jp2)
  4. CHAPTER1 Introduction1 / p1 (0011.jp2)
  5. 1.1 Historical Background / p1 (0011.jp2)
  6. 1.2 Objective of Present Work / p8 (0018.jp2)
  7. 1.3 Synopsis of Each Chapter / p9 (0019.jp2)
  8. References of CHAPTER1 / p12 (0022.jp2)
  9. CHAPTER2 Physics of III-V Compound Semiconductor Interfaces / p13 (0023.jp2)
  10. 2.1 Introduction / p13 (0023.jp2)
  11. 2.2 Models Concerning Origin of Interface States / p14 (0024.jp2)
  12. 2.3 Electrical Properties of III-V Compound Semiconductor Interfaces / p24 (0034.jp2)
  13. References of CHAPTER2 / p34 (0044.jp2)
  14. CHAPTER3 X-ray Photoelectron Spectroscopy (XPS) and Precursive Results of Interface Characterization / p36 (0046.jp2)
  15. 3.1 Introduction / p36 (0046.jp2)
  16. 3.2 Outline of XPS Technique and System Used in This Study / p38 (0048.jp2)
  17. 3.3 Precursive Results of Interface Characterization by XPS / p46 (0056.jp2)
  18. References of CHAPTER3 / p56 (0066.jp2)
  19. CHAPTER4 Control of Fermi Level Pinning at GaAs surfaces by Chemical and Photochemical Treatments / p58 (0068.jp2)
  20. 4.1 Introduction / p58 (0068.jp2)
  21. 4.2 Experimental / p61 (0071.jp2)
  22. 4.3 Results / p66 (0076.jp2)
  23. 4.4 Discussion / p84 (0094.jp2)
  24. 4.5 Conclusion / p93 (0103.jp2)
  25. References of CHAPTER 4 / p95 (0105.jp2)
  26. CHAPTER5 Characterization of InP MIS Structures Fabricated by Anodization / p99 (0109.jp2)
  27. 5.1 Introduction / p99 (0109.jp2)
  28. 5.2 Experimental / p102 (0112.jp2)
  29. 5.3 Results / p104 (0114.jp2)
  30. 5.4 Discussion / p112 (0122.jp2)
  31. 5.5 Conclusion / p125 (0135.jp2)
  32. References of CHAPTER5 / p126 (0136.jp2)
  33. CHAPTER6 Characterization of Metal / III-V Compound Semiconductor Structures / p128 (0138.jp2)
  34. 6.1 Introduction / p128 (0138.jp2)
  35. 6.2 Experimental / p129 (0139.jp2)
  36. 6.3 Results / p130 (0140.jp2)
  37. 6.4 Discussion / p140 (0150.jp2)
  38. 6.5 Conclusion / p143 (0153.jp2)
  39. References of CHAPTER6 / p144 (0154.jp2)
  40. CHAPTER7 Characterization of III-V Compound Semiconductor Heterojunction Interfaces / p146 (0156.jp2)
  41. 7.1 Introduction / p146 (0156.jp2)
  42. 7.2 Experimental / p147 (0157.jp2)
  43. 7.3 Results / p149 (0159.jp2)
  44. 7.4 Discussion / p152 (0162.jp2)
  45. 7.5 Conclusion / p155 (0165.jp2)
  46. References of CHAPTER7 / p156 (0166.jp2)
  47. CHAPTER8 Conclusions / p157 (0167.jp2)
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各種コード

  • NII論文ID(NAID)
    500000085277
  • NII著者ID(NRID)
    • 8000000085491
  • DOI(NDL)
  • NDL書誌ID
    • 000000249591
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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