Characterization of Ⅲ-V compound semiconductor interfaces by X-ray photoelectron spectroscopy 光電子分光法によるⅢ-V族化合物半導体界面の評価
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Bibliographic Information
- Title
-
Characterization of Ⅲ-V compound semiconductor interfaces by X-ray photoelectron spectroscopy
- Other Title
-
光電子分光法によるⅢ-V族化合物半導体界面の評価
- Author
-
石井, 宏辰
- Author(Another name)
-
イシイ, ヒロタツ
- University
-
北海道大学
- Types of degree
-
工学博士
- Grant ID
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甲第3041号
- Degree year
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1992-03-25
Note and Description
博士論文
Table of Contents
- CONTENTS / p3 (0005.jp2)
- Acknowledgements / p1 (0003.jp2)
- Contents / p3 (0005.jp2)
- CHAPTER1 Introduction1 / p1 (0011.jp2)
- 1.1 Historical Background / p1 (0011.jp2)
- 1.2 Objective of Present Work / p8 (0018.jp2)
- 1.3 Synopsis of Each Chapter / p9 (0019.jp2)
- References of CHAPTER1 / p12 (0022.jp2)
- CHAPTER2 Physics of III-V Compound Semiconductor Interfaces / p13 (0023.jp2)
- 2.1 Introduction / p13 (0023.jp2)
- 2.2 Models Concerning Origin of Interface States / p14 (0024.jp2)
- 2.3 Electrical Properties of III-V Compound Semiconductor Interfaces / p24 (0034.jp2)
- References of CHAPTER2 / p34 (0044.jp2)
- CHAPTER3 X-ray Photoelectron Spectroscopy (XPS) and Precursive Results of Interface Characterization / p36 (0046.jp2)
- 3.1 Introduction / p36 (0046.jp2)
- 3.2 Outline of XPS Technique and System Used in This Study / p38 (0048.jp2)
- 3.3 Precursive Results of Interface Characterization by XPS / p46 (0056.jp2)
- References of CHAPTER3 / p56 (0066.jp2)
- CHAPTER4 Control of Fermi Level Pinning at GaAs surfaces by Chemical and Photochemical Treatments / p58 (0068.jp2)
- 4.1 Introduction / p58 (0068.jp2)
- 4.2 Experimental / p61 (0071.jp2)
- 4.3 Results / p66 (0076.jp2)
- 4.4 Discussion / p84 (0094.jp2)
- 4.5 Conclusion / p93 (0103.jp2)
- References of CHAPTER 4 / p95 (0105.jp2)
- CHAPTER5 Characterization of InP MIS Structures Fabricated by Anodization / p99 (0109.jp2)
- 5.1 Introduction / p99 (0109.jp2)
- 5.2 Experimental / p102 (0112.jp2)
- 5.3 Results / p104 (0114.jp2)
- 5.4 Discussion / p112 (0122.jp2)
- 5.5 Conclusion / p125 (0135.jp2)
- References of CHAPTER5 / p126 (0136.jp2)
- CHAPTER6 Characterization of Metal / III-V Compound Semiconductor Structures / p128 (0138.jp2)
- 6.1 Introduction / p128 (0138.jp2)
- 6.2 Experimental / p129 (0139.jp2)
- 6.3 Results / p130 (0140.jp2)
- 6.4 Discussion / p140 (0150.jp2)
- 6.5 Conclusion / p143 (0153.jp2)
- References of CHAPTER6 / p144 (0154.jp2)
- CHAPTER7 Characterization of III-V Compound Semiconductor Heterojunction Interfaces / p146 (0156.jp2)
- 7.1 Introduction / p146 (0156.jp2)
- 7.2 Experimental / p147 (0157.jp2)
- 7.3 Results / p149 (0159.jp2)
- 7.4 Discussion / p152 (0162.jp2)
- 7.5 Conclusion / p155 (0165.jp2)
- References of CHAPTER7 / p156 (0166.jp2)
- CHAPTER8 Conclusions / p157 (0167.jp2)