Modelling of radio frequency non-equilibrium plasmas rf非平衡プラズマのモデリング

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著者

    • 横澤, 亜由美 ヨコザワ, アユミ

書誌事項

タイトル

Modelling of radio frequency non-equilibrium plasmas

タイトル別名

rf非平衡プラズマのモデリング

著者名

横澤, 亜由美

著者別名

ヨコザワ, アユミ

学位授与大学

北海道大学

取得学位

工学博士

学位授与番号

甲第3045号

学位授与年月日

1992-03-25

注記・抄録

博士論文

目次

  1. Contents / (0004.jp2)
  2. Acknowledgments / (0003.jp2)
  3. Chapter1 Introduction / p1 (0009.jp2)
  4. 1-1 General Remarks / p1 (0009.jp2)
  5. 1-2 Background of Previous Work on rf Plasmas for Plasma CVD / p2 (0010.jp2)
  6. 1-3 Purpose and Synopsis of the Thesis / p10 (0018.jp2)
  7. References / p12 (0020.jp2)
  8. Chapter2 Modelling of Plasma Kinetics / p16 (0024.jp2)
  9. 2-1 Introduction / p16 (0024.jp2)
  10. 2-2 Monte Carlo Simulation Method / p18 (0026.jp2)
  11. 2-3 Modelling of rf Plasmas / p33 (0041.jp2)
  12. References / p41 (0049.jp2)
  13. Chapter3 Simulation of rf plasmas in Helium-like Model Gas / p42 (0050.jp2)
  14. 3-1 Introduction / p42 (0050.jp2)
  15. 3-2 Simulation Parameters and Conditions / p43 (0051.jp2)
  16. 3-3 Results and Discussion / p46 (0054.jp2)
  17. 3-4 Summary and Remarks / p62 (0070.jp2)
  18. References / p64 (0072.jp2)
  19. Chapter4 Simulation of rf Plasmas in Argon / p65 (0073.jp2)
  20. 4-1 Introduction / p65 (0073.jp2)
  21. 4-2 Simulation Parameters and Conditions / p67 (0075.jp2)
  22. 4-3 Results and Discussion / p69 (0077.jp2)
  23. 4-4 Comparison with Experiments / p86 (0094.jp2)
  24. 4-5 Examination of Bohm's Criterion / p91 (0099.jp2)
  25. 4-6 Summary and Remarks / p98 (0106.jp2)
  26. References / p100 (0108.jp2)
  27. Chapter5 Simulation of rf plasmas in Monosilane / p101 (0109.jp2)
  28. 5-1 Introduction / p101 (0109.jp2)
  29. 5-2 Simulation of Electron and Ion Reactions / p103 (0111.jp2)
  30. 5-3 Simulation Parameters and Conditions / p110 (0118.jp2)
  31. 5-4 Simulation Results(1):Recombination Coefficient Dependence / p113 (0121.jp2)
  32. 5-5 Simulation Results(2):Collision Cross Section Dependence / p140 (0148.jp2)
  33. 5-6 Examination of Bohm's Criterion / p149 (0157.jp2)
  34. 5-7 Summary and Remarks / p154 (0162.jp2)
  35. References / p156 (0164.jp2)
  36. Chapter6 Simulation of Plasma Chemistry in Monosilane / p157 (0165.jp2)
  37. 6-1 Introduction / p157 (0165.jp2)
  38. 6-2 Modelling of Plasma Chemistry in SiH₄ rf Plasmas / p158 (0166.jp2)
  39. 6-3 Results and Discussion / p169 (0177.jp2)
  40. 6-4 Summary and Remarks / p189 (0197.jp2)
  41. References / p190 (0198.jp2)
  42. Chapter7 Simulation for Film Growth of Hydrogenated Amorphous Silicon / p191 (0199.jp2)
  43. 7-1 Introduction / p191 (0199.jp2)
  44. 7-2 Modelling of Surface Reactions and Film Growth / p192 (0200.jp2)
  45. 7-3 Preparatory Simulation for Self-consistent Modelling / p204 (0212.jp2)
  46. 7-4 Substrate Temperature Dependence / p218 (0226.jp2)
  47. 7-5 Radical Flux Dependence / p228 (0236.jp2)
  48. 7-6 Activation Energy of Hydrogen Elimination from Film / p236 (0244.jp2)
  49. 7-7 Summary and Remarks / p242 (0250.jp2)
  50. References / p243 (0251.jp2)
  51. Chapter8 Conclusions / p244 (0252.jp2)
  52. References of the Author's / p252 (0260.jp2)
  53. Appendeces / (0267.jp2)
  54. A-1:Examination of the validity of the present Monte Carlo model / p1 (0268.jp2)
  55. A-2:Simulation Program of rf Plasmas in SiH₄ Gas / p4 (0271.jp2)
  56. A-3:Simulation Program of Growth of a-Si:H Films / p22 (0280.jp2)
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各種コード

  • NII論文ID(NAID)
    500000085281
  • NII著者ID(NRID)
    • 8000000085495
  • DOI(NDL)
  • NDL書誌ID
    • 000000249595
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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