Studies on heteroepitaxial growth of GaAs on Si substrate by metal organic chemical vapor deposition 有機金属気相成長法によるSi基板上GaAs成長の研究

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Author

    • 藤田, 和久 フジタ, カズヒサ

Bibliographic Information

Title

Studies on heteroepitaxial growth of GaAs on Si substrate by metal organic chemical vapor deposition

Other Title

有機金属気相成長法によるSi基板上GaAs成長の研究

Author

藤田, 和久

Author(Another name)

フジタ, カズヒサ

University

名古屋工業大学

Types of degree

工学博士

Grant ID

乙第40号

Degree year

1992-06-04

Note and Description

博士論文

Table of Contents

  1. CONTENTS / (0003.jp2)
  2. Chapter 1.Introduction / p1 (0005.jp2)
  3. 1.1 Background / p1 (0005.jp2)
  4. 1.2 GaAs epitaxial growth on Si / p4 (0007.jp2)
  5. 1.3 Initial stage of GaAs growth on Si / p10 (0010.jp2)
  6. 1.4 Purpose and organization of dissertation / p15 (0012.jp2)
  7. References / p19 (0014.jp2)
  8. Chapter 2.Si substrate preparation for GaAs growth on Si / p27 (0018.jp2)
  9. 2.1 Introduction / p27 (0018.jp2)
  10. 2.2 Experimental procedure / p29 (0019.jp2)
  11. 2.3 Domain direction of GaAs layers / p33 (0021.jp2)
  12. 2.4 Surface morphology and crystallinity of GaAs layers / p44 (0027.jp2)
  13. 2.5 Conclusions / p48 (0029.jp2)
  14. References / p53 (0031.jp2)
  15. Chapter 3.AsH₃ preflow conditions for GaAs growth on Si / p54 (0032.jp2)
  16. 3.1 Introduction / p54 (0032.jp2)
  17. 3.2 Experimental procedure / p55 (0032.jp2)
  18. 3.3 Structural quality of GaAs layers / p57 (0033.jp2)
  19. 3.4 Interface structure of GaAs/Si / p62 (0036.jp2)
  20. 3.5 Conclusions / p64 (0037.jp2)
  21. References / p65 (0037.jp2)
  22. Chapter 4.Initial stage of GaAs growth on Si / p67 (0038.jp2)
  23. 4.1 Introduction / p67 (0038.jp2)
  24. 4.2 Experimental procedure / p69 (0039.jp2)
  25. 4.3 Si surface after AsH₃ preflow / p70 (0040.jp2)
  26. 4.4 GaAs initial layers on Si / p77 (0043.jp2)
  27. 4.5 Conclusions / p86 (0048.jp2)
  28. References / p87 (0048.jp2)
  29. Chapter 5.GaAs growth on Si using an (Al,In) GaAs/GaAs buffer layer / p89 (0049.jp2)
  30. 5.1 Introduction / p89 (0049.jp2)
  31. 5.2 Experimental procedure / p91 (0050.jp2)
  32. 5.3 Crystalline quality of GaAs layers / p94 (0052.jp2)
  33. 5.4 Initial stage of GaAs growth on Si / p99 (0054.jp2)
  34. 5.5 Conclusions / p109 (0059.jp2)
  35. References / p110 (0060.jp2)
  36. Chapter 6.GaAs growth on Si by alternate gas flow of the source materials / p113 (0061.jp2)
  37. 6.1 Introduction / p113 (0061.jp2)
  38. 6.2 Experimental procedure / p114 (0062.jp2)
  39. 6.3 Low temperature growth of GaAs on Si / p117 (0063.jp2)
  40. 6.4 Application to GaAs buffer layer / p129 (0069.jp2)
  41. 6.5 Conclusions / p131 (0070.jp2)
  42. References / p134 (0072.jp2)
  43. Chapter 7.Summary / p137 (0073.jp2)
  44. Scope of future work / p140 (0075.jp2)
  45. Acknowledgments / p143 (0076.jp2)
  46. List of related publications / p145 (0077.jp2)
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Codes

  • NII Article ID (NAID)
    500000086346
  • NII Author ID (NRID)
    • 8000000086560
  • DOI(NDL)
  • NDLBibID
    • 000000250660
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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