A study on application of a silicon-on-insulator structure to pressure sensors Silicon-on-Insulator構造の圧力センサへの応用に関する研究

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著者

    • 鄭, 貴相 チョン, ギサン

書誌事項

タイトル

A study on application of a silicon-on-insulator structure to pressure sensors

タイトル別名

Silicon-on-Insulator構造の圧力センサへの応用に関する研究

著者名

鄭, 貴相

著者別名

チョン, ギサン

学位授与大学

豊橋技術科学大学

取得学位

工学博士

学位授与番号

甲第62号

学位授与年月日

1992-03-23

注記・抄録

博士論文

目次

  1. TABLE OF CONTENTS / p15 (0017.jp2)
  2. ABSTRACT(in Japanese) / p2 (0004.jp2)
  3. ABSTRACT(in English) / p4 (0006.jp2)
  4. ACKNOWLEDGMENTS / p6 (0008.jp2)
  5. LIST OF FIGURES / p7 (0009.jp2)
  6. LIST OF TABLES / p13 (0015.jp2)
  7. LIST OF APPENDICES / p14 (0016.jp2)
  8. CHAPTER / p1 (0020.jp2)
  9. I.GENERAL INTRODUCTION / p1 (0020.jp2)
  10. 1.1 Background / p1 (0020.jp2)
  11. 1.2 Applications of a SOI Structure / p7 (0026.jp2)
  12. 1.3 Objectives of the Present Research / p9 (0028.jp2)
  13. References / p12 (0031.jp2)
  14. II.SILICON PIEZORESISTIVE PRESSURE SENSORS / p15 (0034.jp2)
  15. 2.1 Introduction / p15 (0034.jp2)
  16. 2.2 Piezoresistance in Si / p17 (0036.jp2)
  17. 2.3 Thin Diaphragm Pressure Sensors Utilizing Shear Piezoresistance / p25 (0044.jp2)
  18. 2.4 Design Considerations / p33 (0052.jp2)
  19. 2.5 Conclusion / p37 (0056.jp2)
  20. References / p39 (0058.jp2)
  21. III.FORMATION OF A SOI STRUCTURE / p43 (0062.jp2)
  22. 3.1 Introduction / p43 (0062.jp2)
  23. 3.2 Si/SiO₂/Si Structures by Si-Wafer Direct Bonding / p48 (0067.jp2)
  24. 3.3 Evaluation of a SOI Structure / p64 (0083.jp2)
  25. 3.4 Epitaxially Stacked Si/Al₂O₃/Si Structures / p71 (0090.jp2)
  26. 3.5 Evaluation of Epitaxially Grown A₂O₃ and Si Films / p76 (0095.jp2)
  27. 3.6 Conclusion / p78 (0097.jp2)
  28. Reference / p80 (0099.jp2)
  29. IV.ELECTRICAL AND MECHANICAL PROPERTIES OF THIN SOI FILMS / p87 (0106.jp2)
  30. 4.1 Introduction / p87 (0106.jp2)
  31. 4.2 Single-Crystalline SOI MOS Devices / p88 (0107.jp2)
  32. 4.3 Piezoresistance Effect of SOI Films / p102 (0121.jp2)
  33. 4.4 Conclusion / p120 (0139.jp2)
  34. References / p122 (0141.jp2)
  35. V.HIGH-RESOLUTION PRESSURE SENSORS / p126 (0145.jp2)
  36. 5.1 Introduction / p126 (0145.jp2)
  37. 5.2 Thin Diaphragm Formation / p127 (0146.jp2)
  38. 5.3 Sensor Fabrication / p134 (0153.jp2)
  39. 5.4 Sensor Characteristics / p144 (0163.jp2)
  40. 5.5 Conclusion / p151 (0170.jp2)
  41. References / p153 (0172.jp2)
  42. VI.HIGH-TEMPERATURE PRESSURE SENSORS / p159 (0178.jp2)
  43. 6.1 Introduction / p159 (0178.jp2)
  44. 6.2 Requirement Conditions of a High Temperature Sensing-Element / p162 (0181.jp2)
  45. 6.3 Sensor Fabrication / p174 (0193.jp2)
  46. 6.4 Sensor Characteristics / p179 (0198.jp2)
  47. 6.5 Conclusion / p187 (0206.jp2)
  48. References / p189 (0208.jp2)
  49. VII.HIGH-PERFORMANCE PRESSURE SENSORS WITH DOUBLE S0I STRUCTURES / p195 (0214.jp2)
  50. 7.1 Introduction / p195 (0214.jp2)
  51. 7.2 Description of Proposed Sensor Structure / p196 (0215.jp2)
  52. 7.3 Sensor Fabrication / p199 (0218.jp2)
  53. 7.4 Evaluation of Double SOI films / p202 (0221.jp2)
  54. 7.5 Sensor Characteristics / p204 (0223.jp2)
  55. 7.6 Conclusion / p209 (0228.jp2)
  56. References / p211 (0230.jp2)
  57. VIII.SUMMARY AND SUGGESTIONS FOR FUTURE RESEARCH / p217 (0236.jp2)
  58. APPENDICES / p222 (0241.jp2)
  59. LIST OF PAPERS CONCERNED WITH THIS DISSERTATION / p231 (0250.jp2)
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各種コード

  • NII論文ID(NAID)
    500000087360
  • NII著者ID(NRID)
    • 8000000087576
  • DOI(NDL)
  • NDL書誌ID
    • 000000251674
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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