Investigation on the initial growth process and interface formation of Si-GaAs heterostructures grown by molecular beam epitaxy 分子線エピタキシーによるSi-GaAsヘテロ構造の初期成長過程と界面形成に関する研究

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著者

    • Lopez Lopez Maximo ロペス ロペス マキシモ

書誌事項

タイトル

Investigation on the initial growth process and interface formation of Si-GaAs heterostructures grown by molecular beam epitaxy

タイトル別名

分子線エピタキシーによるSi-GaAsヘテロ構造の初期成長過程と界面形成に関する研究

著者名

Lopez Lopez Maximo

著者別名

ロペス ロペス マキシモ

学位授与大学

豊橋技術科学大学

取得学位

工学博士

学位授与番号

甲第63号

学位授与年月日

1992-03-23

注記・抄録

博士論文

目次

  1. 論文要旨 / p2 (0004.jp2)
  2. CONTENTS / p6 (0008.jp2)
  3. Chapter1.Introduction. / p1 (0013.jp2)
  4. 1.1 GaAs and Si:two of the most important semiconductors / p1 (0013.jp2)
  5. 1.2 Applications of the growth of GaAs on Si / p2 (0014.jp2)
  6. 1.3 Problems of the growth of GaAs on Si / p3 (0015.jp2)
  7. 1.4 Purpose of the present work / p12 (0024.jp2)
  8. 1.5 References / p14 (0026.jp2)
  9. Chapter2.Molecular beam epitaxial growth of GaAs and Si. / p16 (0028.jp2)
  10. 2.1 Description of the molecular beam epitaxial growth system / p16 (0028.jp2)
  11. 2.2 Refelction-high energy electron diffraction / p18 (0030.jp2)
  12. 2.3 Review of the growth process of GaAs on GaAs substrates / p19 (0031.jp2)
  13. 2.4 Silicon-molecular beam epitaxy / p31 (0043.jp2)
  14. 2.5 References / p37 (0049.jp2)
  15. Chapter3.Growth of GaAs on GaAs(110)substrates. / p40 (0052.jp2)
  16. 3.1 Properties of the GaAs(110)surface / p40 (0052.jp2)
  17. 3.2 Problems in the growth by molecular beam epitaxy / p41 (0053.jp2)
  18. 3-3 Growth by migration enhanced epitaxy / p47 (0059.jp2)
  19. 3.4 Conclusions / p52 (0064.jp2)
  20. 3.5 References / p53 (0065.jp2)
  21. Chapter4.Growth mechanism of GaAs on Si(110)substrates. / p55 (0067.jp2)
  22. 4.1 Properties of the(110)surfaces / p55 (0067.jp2)
  23. 4.2 Growth by molecular beam epitaxy / p56 (0068.jp2)
  24. 4.3 Growth by migration enhanced epitaxy / p77 (0089.jp2)
  25. 4.4 Conclusions / p79 (0091.jp2)
  26. 4.5 References / p81 (0093.jp2)
  27. Chapter5.Initial growth mechanism of Si on GaAs substrates. / p83 (0095.jp2)
  28. 5.1 Why to study the growth of Si on GaAs? / p83 (0095.jp2)
  29. 5.2 Si on GaAs(100) / p84 (0096.jp2)
  30. 5.3 Growth mode of Si on GaAs(100)-and on GaAs(111)B substrates / p101 (0113.jp2)
  31. 5.4 Conclusions / p105 (0117.jp2)
  32. 5.5 References / p106 (0118.jp2)
  33. Chapter6.Growth process of GaAs on Si films grown on GaAs(100)substrates. / p108 (0120.jp2)
  34. 6.1 Applications of the GaAs/Si/GaAs heterostructure / p108 (0120.jp2)
  35. 6.2 Growth by molecular beam epitaxy / p110 (0122.jp2)
  36. 6.3 Growth by migration enhanced epitaxy / p122 (0134.jp2)
  37. 6.4 Implications for the GaAs on Si substrates heteroepitaxy / p130 (0142.jp2)
  38. 6.5 Conclusions / p131 (0143.jp2)
  39. 6.6 References / p132 (0144.jp2)
  40. Chapter7.Summary and future prospects / p134 (0146.jp2)
  41. Appendix A.Theory of reflection high-energy electron diffraction / p138 (0150.jp2)
  42. Appendix B.Details of the growth by migration-enhanced epitaxy / p144 (0156.jp2)
  43. Appendix C.Calculation of the RHEED patterns from twined regions / p153 (0165.jp2)
  44. Appendix D.Calculation of the number of slip systems for perfect dislocations in the zincblende structure / p159 (0171.jp2)
  45. Acknowledgments / p163 (0175.jp2)
  46. List of papers related with the present dissertation / p164 (0176.jp2)
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各種コード

  • NII論文ID(NAID)
    500000087361
  • NII著者ID(NRID)
    • 8000000087577
  • DOI(NDL)
  • NDL書誌ID
    • 000000251675
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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