Investigation on the initial growth process and interface formation of Si-GaAs heterostructures grown by molecular beam epitaxy 分子線エピタキシーによるSi-GaAsヘテロ構造の初期成長過程と界面形成に関する研究
Access this Article
Search this Article
Author
Bibliographic Information
- Title
-
Investigation on the initial growth process and interface formation of Si-GaAs heterostructures grown by molecular beam epitaxy
- Other Title
-
分子線エピタキシーによるSi-GaAsヘテロ構造の初期成長過程と界面形成に関する研究
- Author
-
Lopez Lopez Maximo
- Author(Another name)
-
ロペス ロペス マキシモ
- University
-
豊橋技術科学大学
- Types of degree
-
工学博士
- Grant ID
-
甲第63号
- Degree year
-
1992-03-23
Note and Description
博士論文
Table of Contents
- 論文要旨 / p2 (0004.jp2)
- CONTENTS / p6 (0008.jp2)
- Chapter1.Introduction. / p1 (0013.jp2)
- 1.1 GaAs and Si:two of the most important semiconductors / p1 (0013.jp2)
- 1.2 Applications of the growth of GaAs on Si / p2 (0014.jp2)
- 1.3 Problems of the growth of GaAs on Si / p3 (0015.jp2)
- 1.4 Purpose of the present work / p12 (0024.jp2)
- 1.5 References / p14 (0026.jp2)
- Chapter2.Molecular beam epitaxial growth of GaAs and Si. / p16 (0028.jp2)
- 2.1 Description of the molecular beam epitaxial growth system / p16 (0028.jp2)
- 2.2 Refelction-high energy electron diffraction / p18 (0030.jp2)
- 2.3 Review of the growth process of GaAs on GaAs substrates / p19 (0031.jp2)
- 2.4 Silicon-molecular beam epitaxy / p31 (0043.jp2)
- 2.5 References / p37 (0049.jp2)
- Chapter3.Growth of GaAs on GaAs(110)substrates. / p40 (0052.jp2)
- 3.1 Properties of the GaAs(110)surface / p40 (0052.jp2)
- 3.2 Problems in the growth by molecular beam epitaxy / p41 (0053.jp2)
- 3-3 Growth by migration enhanced epitaxy / p47 (0059.jp2)
- 3.4 Conclusions / p52 (0064.jp2)
- 3.5 References / p53 (0065.jp2)
- Chapter4.Growth mechanism of GaAs on Si(110)substrates. / p55 (0067.jp2)
- 4.1 Properties of the(110)surfaces / p55 (0067.jp2)
- 4.2 Growth by molecular beam epitaxy / p56 (0068.jp2)
- 4.3 Growth by migration enhanced epitaxy / p77 (0089.jp2)
- 4.4 Conclusions / p79 (0091.jp2)
- 4.5 References / p81 (0093.jp2)
- Chapter5.Initial growth mechanism of Si on GaAs substrates. / p83 (0095.jp2)
- 5.1 Why to study the growth of Si on GaAs? / p83 (0095.jp2)
- 5.2 Si on GaAs(100) / p84 (0096.jp2)
- 5.3 Growth mode of Si on GaAs(100)-and on GaAs(111)B substrates / p101 (0113.jp2)
- 5.4 Conclusions / p105 (0117.jp2)
- 5.5 References / p106 (0118.jp2)
- Chapter6.Growth process of GaAs on Si films grown on GaAs(100)substrates. / p108 (0120.jp2)
- 6.1 Applications of the GaAs/Si/GaAs heterostructure / p108 (0120.jp2)
- 6.2 Growth by molecular beam epitaxy / p110 (0122.jp2)
- 6.3 Growth by migration enhanced epitaxy / p122 (0134.jp2)
- 6.4 Implications for the GaAs on Si substrates heteroepitaxy / p130 (0142.jp2)
- 6.5 Conclusions / p131 (0143.jp2)
- 6.6 References / p132 (0144.jp2)
- Chapter7.Summary and future prospects / p134 (0146.jp2)
- Appendix A.Theory of reflection high-energy electron diffraction / p138 (0150.jp2)
- Appendix B.Details of the growth by migration-enhanced epitaxy / p144 (0156.jp2)
- Appendix C.Calculation of the RHEED patterns from twined regions / p153 (0165.jp2)
- Appendix D.Calculation of the number of slip systems for perfect dislocations in the zincblende structure / p159 (0171.jp2)
- Acknowledgments / p163 (0175.jp2)
- List of papers related with the present dissertation / p164 (0176.jp2)