Growth processes of silicon thin films in various structural phases manufactured from silicon tetrafluoride at low temperatures フッ素系原料ガスによるシリコン薄膜の低温成長過程についての研究

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著者

    • 中田, 眞佐美 ナカタ, マサミ

書誌事項

タイトル

Growth processes of silicon thin films in various structural phases manufactured from silicon tetrafluoride at low temperatures

タイトル別名

フッ素系原料ガスによるシリコン薄膜の低温成長過程についての研究

著者名

中田, 眞佐美

著者別名

ナカタ, マサミ

学位授与大学

東京工業大学

取得学位

工学博士

学位授与番号

甲第2485号

学位授与年月日

1992-03-26

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. Table of Contents / (0006.jp2)
  3. Chapter 1 Introduction / p1 (0009.jp2)
  4. 1.1 Background of this thesis / p1 (0009.jp2)
  5. 1.2 Growth mechanism of amorphous and crystalline silicon from SiH₄ / p4 (0011.jp2)
  6. 1.3 Current topics in amorphous and microcrystalline silicon / p11 (0014.jp2)
  7. 1.4 Organization and scientific significance of this thesis References / p13 (0015.jp2)
  8. Chapter 2 Experimental techniques / p22 (0020.jp2)
  9. 2.1 PE-CVD(plasma-enhanced chemical vapor deposition)system / p22 (0020.jp2)
  10. 2.2 Techniques for characterization of films / p23 (0020.jp2)
  11. References / p48 (0033.jp2)
  12. Chapter 3 Amorphization and microcrystalline/amorphous multilayered structure / p50 (0034.jp2)
  13. 3.1 Introduction / p50 (0034.jp2)
  14. 3.2 Experimental procedures / p51 (0034.jp2)
  15. 3.3 Results and discussion / p59 (0038.jp2)
  16. 3.4 Conclusions / p100 (0061.jp2)
  17. References / p102 (0062.jp2)
  18. Chapter 4 Epitaxial growth / p104 (0063.jp2)
  19. 4.1 Introduction / p104 (0063.jp2)
  20. 4.2 Experimental procedure / p104 (0063.jp2)
  21. 4.3 Results and discussion / p108 (0065.jp2)
  22. 4.4 Conclusions / p122 (0074.jp2)
  23. References / p122 (0074.jp2)
  24. Chapter 5 Crystallization processes in formation of microcrystalline phase / p123 (0075.jp2)
  25. 5.1 Introduction / p123 (0075.jp2)
  26. 5.2 Results and discussion / p126 (0076.jp2)
  27. 5.3 Conclusions / p166 (0101.jp2)
  28. References / p167 (0102.jp2)
  29. Chapter 6 Anomalous grain growth by addition of dopants / p168 (0102.jp2)
  30. 6.1 Introduction / p168 (0102.jp2)
  31. 6.2 Results / p170 (0103.jp2)
  32. 6.3 Discussion / p178 (0108.jp2)
  33. 6.4 Conclusions / p184 (0111.jp2)
  34. References / p186 (0112.jp2)
  35. Chapter 7 Application of a layer-by-layer deposition to post treatment of growing surface / p187 (0113.jp2)
  36. 7.1 Introduction / p187 (0113.jp2)
  37. 7.2 Experimental / p189 (0114.jp2)
  38. 7.3 Results and discussion / p192 (0117.jp2)
  39. 7.4 Conclusions / p219 (0132.jp2)
  40. References / p221 (0133.jp2)
  41. Chapter 8 Carrier conduction in films / p222 (0133.jp2)
  42. 8.1 Introduction-General concepts of carrier conduction in amorphous and polycrystalline silicon films / p222 (0133.jp2)
  43. 8.2 Results and discussion / p227 (0136.jp2)
  44. 8.3 Conclusions / p257 (0151.jp2)
  45. References / p258 (0152.jp2)
  46. Chapter 9 Ellipsometric analysis of growing surface / p259 (0152.jp2)
  47. 9.1 Experimental procedures / p260 (0153.jp2)
  48. 9.2 Results and discussion / p264 (0156.jp2)
  49. 9.3 Conclusions / p270 (0159.jp2)
  50. References / p271 (0160.jp2)
  51. Chapter 10 Summary and concluding remarks / p273 (0161.jp2)
  52. 10.1 Summary / p273 (0161.jp2)
  53. 10.2 Concluding remarks / p277 (0163.jp2)
  54. List of publications and conference presentations / p279 (0164.jp2)
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各種コード

  • NII論文ID(NAID)
    500000088419
  • NII著者ID(NRID)
    • 8000000088638
  • DOI(NDL)
  • NDL書誌ID
    • 000000252733
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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