Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs HEMT IC用GaAs/AlGaAsヘテロ構造のMBE成長に関する研究

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著者

    • 斎藤, 淳二 サイトウ, ジュンジ

書誌事項

タイトル

Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs

タイトル別名

HEMT IC用GaAs/AlGaAsヘテロ構造のMBE成長に関する研究

著者名

斎藤, 淳二

著者別名

サイトウ, ジュンジ

学位授与大学

東京工業大学

取得学位

工学博士

学位授与番号

乙第2220号

学位授与年月日

1991-05-31

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. CONTENTS / p2 (0005.jp2)
  3. Preface / p1 (0004.jp2)
  4. Chapter1 Overview of Electrical Properties of Selectively Doped GaAs/AlGaAs Heterostructures for HEMT ICs / p1 (0009.jp2)
  5. 1.1 Introduction / p1 (0009.jp2)
  6. 1.2 Principles of HEMT operation and heterostructures / p4 (0012.jp2)
  7. 1.3 Characteristics of epitaxial layers for HEMT structures / p9 (0017.jp2)
  8. 1.4 Summary / p13 (0021.jp2)
  9. Chapter2 Transport Theory of Two-Dimensional Electron Gas in Selectively Doped GaAs/AlGaAs Heterostructures / p14 (0022.jp2)
  10. 2.1 Introduction / p14 (0022.jp2)
  11. 2.2 Energy levels and wave functions / p14 (0022.jp2)
  12. 2.3 Low-temperature mobility / p20 (0028.jp2)
  13. 2.4 Summary / p24 (0032.jp2)
  14. Chapter3 Experiments on Low-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/AlGaAs Heterostructures / p25 (0033.jp2)
  15. 3.1 Introduction / p25 (0033.jp2)
  16. 3.2 Thickness of undoped AlGaAs layer at heterostructures / p25 (0033.jp2)
  17. 3.3 Two-dimensional electron gas as a function of AlAs mole fraction / p31 (0039.jp2)
  18. 3.4 Summary / p36 (0044.jp2)
  19. Chapter4 Electrical Properties of Selectively Doped GaAs/AIGaAs Heterostructures for HEMT ICs / p37 (0045.jp2)
  20. 4.1 Introduction / p37 (0045.jp2)
  21. 4.2 Electrical properties of Si-doped AlGaAs epitaxial layer / p37 (0045.jp2)
  22. 4.3 Two dimensional electron gas in modulated structure of Si-doped AlGaAs layer / p45 (0053.jp2)
  23. 4.4 Two dimensional electron gas in double heterostructures / p50 (0058.jp2)
  24. 4.5 Summary / p60 (0068.jp2)
  25. Chapter5 In-Situ Cleaning of GaAs Substrate Surfaces prior to Molecular Beam Epitaxy / p62 (0070.jp2)
  26. 5.1 Introduction / p62 (0070.jp2)
  27. 5.2 Thermal desorption of GaAs surface layer / p63 (0071.jp2)
  28. 5.3 Chemical desorption of GaAs surface layer by HCI/H₂ mixture gas / p83 (0091.jp2)
  29. 5.4 Summary / p94 (0102.jp2)
  30. Chapter6 Molecular Beam Epitaxial Techniques for HEMT ICs / p95 (0103.jp2)
  31. 6.1 Introduction / p95 (0103.jp2)
  32. 6.2 MBE growth of highly uniform epitaxial layers / p95 (0103.jp2)
  33. 6.3 In-free GaAs substrate mounting / p103 (0111.jp2)
  34. 6.4 Elimination of surface defects / p107 (0115.jp2)
  35. 6.5 Projected MBE techniques for HEMT ICs / p116 (0124.jp2)
  36. 6.6 Summary / p122 (0130.jp2)
  37. Chapter7 HEMTICs Characteristics / p123 (0131.jp2)
  38. 7.1 Introduction / p123 (0131.jp2)
  39. 7.2 Self-alignment / p123 (0131.jp2)
  40. 7.3 Influence of surface defects / p127 (0135.jp2)
  41. 7.4 HEMT ICs / p134 (0142.jp2)
  42. 7.5 Summary / p139 (0147.jp2)
  43. Chapter8 Conclusion / p140 (0148.jp2)
  44. Acknowledgments / p143 (0151.jp2)
  45. References / p144 (0152.jp2)
  46. Publications / p152 (0160.jp2)
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各種コード

  • NII論文ID(NAID)
    500000088469
  • NII著者ID(NRID)
    • 8000000088688
  • DOI(NDL)
  • NDL書誌ID
    • 000000252783
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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