Studies of the SiH[x] radicals in a silane glow-discharge processing plasma using infrared diode laser absorption spectroscopy 赤外半導体レーザー吸収分光法を用いたシラングロー放電プロセッシングプラズマ中のSiH[x]ラジカルに関する研究

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著者

    • 板橋, 直志 イタバシ, ナオシ

書誌事項

タイトル

Studies of the SiH[x] radicals in a silane glow-discharge processing plasma using infrared diode laser absorption spectroscopy

タイトル別名

赤外半導体レーザー吸収分光法を用いたシラングロー放電プロセッシングプラズマ中のSiH[x]ラジカルに関する研究

著者名

板橋, 直志

著者別名

イタバシ, ナオシ

学位授与大学

名古屋大学

取得学位

工学博士

学位授与番号

甲第2608号

学位授与年月日

1992-03-25

注記・抄録

博士論文

目次

  1. CONTENTS / p1 (0004.jp2)
  2. CHAPTER1.INTRODUCTION / p1 (0007.jp2)
  3. 1.1 Plasma-Enhanced Chemical Vapor Deposition / p1 (0007.jp2)
  4. 1.2 Problems in the Previous SiHx(x=0~3)Studies / p3 (0009.jp2)
  5. 1.3 Infrared Diode Laser Absorption Spectroscopy / p8 (0014.jp2)
  6. 1.4 Purpose and Composition of Dissertation / p12 (0018.jp2)
  7. REFERENCES FOR CHAPTER 1 / p14 (0020.jp2)
  8. CHAPTER2.INFRARED HIGH-RESOLUTION SPECTRA OF THE SiHx(x=1~3)RADICALS / p17 (0023.jp2)
  9. 2.1 Vibration-Rotation Fundamental Band of the SiH Radical in the X²Π state / p17 (0023.jp2)
  10. 2.2 Vibration-Rotation ν₂ Fundamental Band of the SiH₃ Radical in the X²A₁ state / p19 (0025.jp2)
  11. 2.3 Vibration-Rotation ν₂ Fundamental Band of the SiH₂ Radical in the X¹A₁ state / p23 (0029.jp2)
  12. 2.4 Summary / p27 (0033.jp2)
  13. REFERENCES FOR CHAPTER 2 / p28 (0034.jp2)
  14. CHAPTER3.METHOD FOR MEASURING THE SiHx(x=1~3)RADICAL DENSITIES / p29 (0035.jp2)
  15. 3.1 Measurements of the SiHx(x=1~3)Radical Densities using IRLAS / p29 (0035.jp2)
  16. 3.2 Procedures for Determining the SiHx(x=1~3)Radical Densities / p38 (0044.jp2)
  17. 3.3 Summary / p49 (0055.jp2)
  18. REFERENCES FOR CHAPTER 3 / p50 (0056.jp2)
  19. CHAPTER4.REMOVAL PROCESSES OF THE SiH₃ AND SiH RADICALS / p51 (0057.jp2)
  20. 4.1 Observations of the Decay Curves of the SiH₃ and SiH Radical Densities / p51 (0057.jp2)
  21. 4.2 Removal Process of the SiH₃ Radical / p52 (0058.jp2)
  22. 4.3 Removal Process of the SiH Radical / p62 (0068.jp2)
  23. 4.4 Summary / p67 (0073.jp2)
  24. REFERENCES FOR CHAPTER 4 / p68 (0074.jp2)
  25. CHAPTER5.CHARACTERISTICS OF THE SiHx(x=1~3)RADICAL DENSITIES IN A PULSED-DISCHARGE SILANE PLASMA / p69 (0075.jp2)
  26. 5.1 Measurements of the SiHx(x=1~3)Radical Densities under Various Conditions / p69 (0075.jp2)
  27. 5.2 Characteristics of the SiH₃ Radical Density in a Pulsed-Discharge Silane Plasma / p70 (0076.jp2)
  28. 5.3 Qualitative Interpretation of the SiH₃ Radical Density / p73 (0079.jp2)
  29. 5.4 Comparison among the SiHx(x=1~3)Radical Densities / p75 (0081.jp2)
  30. 5.5 Summary / p77 (0083.jp2)
  31. REFERENCE FOR CHAPTER 5 / p78 (0084.jp2)
  32. CHAPTER 6.APPLICATION OF IRLAS TO THE MEASUREMENT OF THE SiH₃ RADICAL DENSITY IN AN RF-DISCHARGE SILANE PLASMA / p79 (0085.jp2)
  33. 6.1 Measurements of the SiH₃(X²A₁)and SiH(A²Δ)Radical Densities in an RF-Discharge Si lane Plasma using IRLAS and OES / p79 (0085.jp2)
  34. 6.2 Spatial Distributions of SiH₃(X²A₁)and SiH(A²Δ)Radicals / p84 (0090.jp2)
  35. 6.3 Estimation of the Growth Rate of the a-Si:H Thin Film using the Spatial Distribution of SiH₃ Radicals / p88 (0094.jp2)
  36. 6.4 Evaluation of the Spatial Distribution of SiH₃ Radicals using a Differential Equation for the Generation and Removal Processes / p89 (0095.jp2)
  37. 6.5 Summary / p93 (0099.jp2)
  38. REFERENCE FOR CHAPTER 6 / p94 (0100.jp2)
  39. CHAPTER 7.CORRELATION BETWEEN THE SiH₃ RADICAL DENSITY AND THE GROWTH RATE OF THE a-Si:H THIN FILM / p95 (0101.jp2)
  40. 7.1 Measurements of the H₂ Partial Pressure Dependences of the SiH₃ Radical Density and the Growth Rate of the a-Si:H Thin Film / p95 (0101.jp2)
  41. 7.2 Correlation between the SiH₃ Radical Density and the Growth Rate of the a-Si:H Thin Film in a Pulsed-Discharge Silane Plasma / p96 (0102.jp2)
  42. 7.3 Correlation between the SiH₃ Radical Density and the Growth Rate of the a-Si:H Thin Film in an RF-Discharge Silane Plasma / p97 (0103.jp2)
  43. 7.4 Summary / p104 (0110.jp2)
  44. REFERENCES FOR CHAPTER 7 / p105 (0111.jp2)
  45. CHAPTER 8.CONCLUSIONS / p106 (0112.jp2)
  46. 8.1 Summary of This Study / p106 (0112.jp2)
  47. 8.2 Scope for Future Work / p108 (0114.jp2)
  48. ACKNOWLEDGEMENTS / p110 (0116.jp2)
  49. PAPERS CONCERNED WITH THIS STUDY / p111 (0117.jp2)
  50. 1.ORIGINAL PAPERS / p111 (0117.jp2)
  51. 2.INTERNATIONAL CONFERENCES / p112 (0118.jp2)
  52. 3.OTHER RELATED ORIGINAL PAPERS / p113 (0119.jp2)
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各種コード

  • NII論文ID(NAID)
    500000090355
  • NII著者ID(NRID)
    • 8000000090576
  • DOI(NDL)
  • NDL書誌ID
    • 000000254669
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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