The first-principles study of the ground state structure and order-disorder transition of Si(001) clean surface Si(001)清浄表面の基底状態における構造と秩序無秩序転移の第一原理的手法による研究
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Bibliographic Information
- Title
-
The first-principles study of the ground state structure and order-disorder transition of Si(001) clean surface
- Other Title
-
Si(001)清浄表面の基底状態における構造と秩序無秩序転移の第一原理的手法による研究
- Author
-
井上, 耕一郎
- Author(Another name)
-
イノウエ, コウイチロウ
- University
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九州大学
- Types of degree
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博士 (理学)
- Grant ID
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甲第3043号
- Degree year
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1993-03-26
Note and Description
博士論文
Table of Contents
- Contents / p1 (0003.jp2)
- 1 Introduction / p2 (0004.jp2)
- 2 Optimum structure at zero temperature. / p8 (0010.jp2)
- 2.1 The first-principles molecular dynamics method / p8 (0010.jp2)
- 2.2 Calculated system and prescription for the calculations. / p15 (0017.jp2)
- 2.3 The results and discussion. / p19 (0021.jp2)
- 3 Monte Carlo simulation of order-disorder phase transition on Si(OOl) clean surface. / p30 (0032.jp2)
- 3.1 Model for the motion of asymmetric dimer. / p30 (0032.jp2)
- 3.2 The results and discussion. / p35 (0037.jp2)
- 4 Summary / p39 (0041.jp2)