Study of atomic layer epitaxy of zinc-chalcogenides and their superlattices 亜鉛カルコゲナイド及びその超格子の原子層エピタキシーに関する研究
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Bibliographic Information
- Title
-
Study of atomic layer epitaxy of zinc-chalcogenides and their superlattices
- Other Title
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亜鉛カルコゲナイド及びその超格子の原子層エピタキシーに関する研究
- Author
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竹村, 泰司
- Author(Another name)
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タケムラ, ヤスシ
- University
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東京工業大学
- Types of degree
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博士 (工学)
- Grant ID
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甲第2597号
- Degree year
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1993-03-26
Note and Description
博士論文
Table of Contents
- 論文目録 / (0002.jp2)
- TABLE OF CONTENTS / (0005.jp2)
- Chapter1 Overview and Objective of This Research / p1 (0006.jp2)
- Chapter2 Key Features of Zinc-Chalcogenides and Their Superlattices / p5 (0008.jp2)
- 2-1 Physical properties of zinc-chalcogenides / p5 (0008.jp2)
- 2-2 Physical properties of zinc-chalcogenide superlattices / p9 (0010.jp2)
- 2-3 Epitaxial growth technique / p16 (0013.jp2)
- Chapter3 Atomic Layer Epitaxy of Zinc-Chalcogenides / p18 (0014.jp2)
- 3-1 Introduction / p18 (0014.jp2)
- 3-2 Growth mechanism of atomic layer epitaxy / p19 (0015.jp2)
- 3-3 Experimental process / p28 (0019.jp2)
- 3-4 Growth rate and processing window in atomic layer epitaxy of ZnSe / p30 (0020.jp2)
- 3-5 Fractional atomic layer epitaxy of ZnTe / p47 (0029.jp2)
- 3-6 Low temperature growth of ZnS using alternate supplies of diethylzinc and hydrogensulphide / p61 (0036.jp2)
- 3-7 Summary / p71 (0041.jp2)
- Chapter4 Valency Control of ZnSe Using Atomic Layer Epitaxy / p73 (0042.jp2)
- 4-1 Introduction / p73 (0042.jp2)
- 4-2 Valency control of ZnSe / p74 (0042.jp2)
- 4-3 Growth and characterization of Cl-doped ZnSe / p77 (0044.jp2)
- 4-4 Growth and characterization of N-doped ZnSe / p87 (0049.jp2)
- 4-5 Summary / p97 (0054.jp2)
- Chapter5 Atomic Layer Epitaxy of ZnSe-ZnTe Superlattice / p99 (0055.jp2)
- 5-1 Introduction / p99 (0055.jp2)
- 5-2 Atomic layer epitaxy of ZnSe-ZnTe superlattice / p100 (0055.jp2)
- 5-3 Structural analysis of ZnSe-ZnTe superlattice / p102 (0056.jp2)
- 5-4 Summary / p131 (0071.jp2)
- Chapter6 Optical Processes in ZnSe-ZnTe Superlattice / p133 (0072.jp2)
- 6-1 Introduction / p133 (0072.jp2)
- 6-2 Band structure of ZnSe-ZnTe superlattice / p135 (0073.jp2)
- 6-3 Photoluminescence spectrum / p140 (0075.jp2)
- 6-4 Exciton trapping at Te iso-electronic center / p148 (0079.jp2)
- 6-5 Summary / p161 (0086.jp2)
- Chapter7 General Conclusions / p163 (0087.jp2)
- Acknowledgements / p167 (0089.jp2)
- References / p168 (0089.jp2)
- List of Publications / p174 (0092.jp2)