Study of heavily phosphorus-doped Si epitaxial films grown by photo and plasma chemical vapor deposition 光及びプラズマCVD法による高濃度PドープSiエピタキシャル膜に関する研究

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著者

    • 賈, 瑛 チア, イン

書誌事項

タイトル

Study of heavily phosphorus-doped Si epitaxial films grown by photo and plasma chemical vapor deposition

タイトル別名

光及びプラズマCVD法による高濃度PドープSiエピタキシャル膜に関する研究

著者名

賈, 瑛

著者別名

チア, イン

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

甲第2603号

学位授与年月日

1993-03-26

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. TABLE OF CONTENTS / (0005.jp2)
  3. Preface / (0004.jp2)
  4. Chapter 1.Overview and Objective of This Research / p1 (0007.jp2)
  5. Chapter 2.Fundamentals of Heavily Doped Silicon / p6 (0010.jp2)
  6. 2-1 Introduction / p6 (0010.jp2)
  7. 2-2 Physical Properties of Heavily Doped Semiconductors / p8 (0011.jp2)
  8. 2-3 Preparation of Heavily Doped Single Crystal Semiconductors / p18 (0016.jp2)
  9. 2-4 Low-Temprature Epitaxial Growth Technique / p21 (0017.jp2)
  10. Chapter 3. Chemical Vapor Deposition of Heavily P-Doped Si and SiGe Epitaxial Films at Low-Temperature / p23 (0018.jp2)
  11. 3-1 Introduction / p23 (0018.jp2)
  12. 3-2 Photochemical Vapor Deposition of Heavily P-Doped Si Epitaxial Films and their Characterization / p25 (0019.jp2)
  13. 3-3 Photochemical Vapor Deposition of Heavily P-Doped SiGe Epitaxial Films and their Characterization / p54 (0034.jp2)
  14. 3-4 Plasma Chemical Vapor Deposition of Heavily P-Doped Si Epitaxial Films and their Characterization / p66 (0040.jp2)
  15. 3-5 Role of Hydrogen and Fluorine in the Low-Temperature Si Epitaxy / p81 (0047.jp2)
  16. 3-6 Fabrication and Characterization of pn Diodes / p83 (0048.jp2)
  17. 3-7 Summary / p86 (0050.jp2)
  18. Chapter 4. Effects of Deuterium on Low-Temperature Si Epitaxy by Photochemical Vapor Deposition / p88 (0051.jp2)
  19. 4-1 Introduction / p88 (0051.jp2)
  20. 4-2 Concept of Deuterium Use / p90 (0052.jp2)
  21. 4-3 Characterization of Deuterium Addition Effects / p97 (0055.jp2)
  22. 4-4 Summary / p113 (0063.jp2)
  23. Chapter 5. Annealing Characteristic of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature / p114 (0064.jp2)
  24. 5-1 Introduction / p114 (0064.jp2)
  25. 5-2 Annealing Characteristic of Heavily P-Doped Si Epitaxial Films / p116 (0065.jp2)
  26. 5-3 Theoretical Analyses of Annealing Characteristic of Heavily P-Doped Si Epitaxial Films / p124 (0069.jp2)
  27. 5-4 Summary / p131 (0072.jp2)
  28. Chapter 6. Defect Evaluation of Heavily P-Doped Epitaxial Si Films by Positron Annihilation Study / p133 (0073.jp2)
  29. 6-1 Introduction / p133 (0073.jp2)
  30. 6-2 Positron Annihilation Technique / p135 (0074.jp2)
  31. 6-3 Experimental / p144 (0079.jp2)
  32. 6-4 Results and Discussion / p147 (0080.jp2)
  33. 6-5 Summary / p159 (0086.jp2)
  34. Chapter 7. General Conclusions / p161 (0087.jp2)
  35. Acknowledgments / p165 (0089.jp2)
  36. References / p167 (0090.jp2)
  37. List of Publications / p175 (0094.jp2)
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各種コード

  • NII論文ID(NAID)
    500000096944
  • NII著者ID(NRID)
    • 8000000097172
  • DOI(NDL)
  • NDL書誌ID
    • 000000261258
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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