Study of heavily phosphorus-doped Si epitaxial films grown by photo and plasma chemical vapor deposition 光及びプラズマCVD法による高濃度PドープSiエピタキシャル膜に関する研究
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Bibliographic Information
- Title
-
Study of heavily phosphorus-doped Si epitaxial films grown by photo and plasma chemical vapor deposition
- Other Title
-
光及びプラズマCVD法による高濃度PドープSiエピタキシャル膜に関する研究
- Author
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賈, 瑛
- Author(Another name)
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チア, イン
- University
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東京工業大学
- Types of degree
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博士 (工学)
- Grant ID
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甲第2603号
- Degree year
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1993-03-26
Note and Description
博士論文
Table of Contents
- 論文目録 / (0002.jp2)
- TABLE OF CONTENTS / (0005.jp2)
- Preface / (0004.jp2)
- Chapter 1.Overview and Objective of This Research / p1 (0007.jp2)
- Chapter 2.Fundamentals of Heavily Doped Silicon / p6 (0010.jp2)
- 2-1 Introduction / p6 (0010.jp2)
- 2-2 Physical Properties of Heavily Doped Semiconductors / p8 (0011.jp2)
- 2-3 Preparation of Heavily Doped Single Crystal Semiconductors / p18 (0016.jp2)
- 2-4 Low-Temprature Epitaxial Growth Technique / p21 (0017.jp2)
- Chapter 3. Chemical Vapor Deposition of Heavily P-Doped Si and SiGe Epitaxial Films at Low-Temperature / p23 (0018.jp2)
- 3-1 Introduction / p23 (0018.jp2)
- 3-2 Photochemical Vapor Deposition of Heavily P-Doped Si Epitaxial Films and their Characterization / p25 (0019.jp2)
- 3-3 Photochemical Vapor Deposition of Heavily P-Doped SiGe Epitaxial Films and their Characterization / p54 (0034.jp2)
- 3-4 Plasma Chemical Vapor Deposition of Heavily P-Doped Si Epitaxial Films and their Characterization / p66 (0040.jp2)
- 3-5 Role of Hydrogen and Fluorine in the Low-Temperature Si Epitaxy / p81 (0047.jp2)
- 3-6 Fabrication and Characterization of pn Diodes / p83 (0048.jp2)
- 3-7 Summary / p86 (0050.jp2)
- Chapter 4. Effects of Deuterium on Low-Temperature Si Epitaxy by Photochemical Vapor Deposition / p88 (0051.jp2)
- 4-1 Introduction / p88 (0051.jp2)
- 4-2 Concept of Deuterium Use / p90 (0052.jp2)
- 4-3 Characterization of Deuterium Addition Effects / p97 (0055.jp2)
- 4-4 Summary / p113 (0063.jp2)
- Chapter 5. Annealing Characteristic of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature / p114 (0064.jp2)
- 5-1 Introduction / p114 (0064.jp2)
- 5-2 Annealing Characteristic of Heavily P-Doped Si Epitaxial Films / p116 (0065.jp2)
- 5-3 Theoretical Analyses of Annealing Characteristic of Heavily P-Doped Si Epitaxial Films / p124 (0069.jp2)
- 5-4 Summary / p131 (0072.jp2)
- Chapter 6. Defect Evaluation of Heavily P-Doped Epitaxial Si Films by Positron Annihilation Study / p133 (0073.jp2)
- 6-1 Introduction / p133 (0073.jp2)
- 6-2 Positron Annihilation Technique / p135 (0074.jp2)
- 6-3 Experimental / p144 (0079.jp2)
- 6-4 Results and Discussion / p147 (0080.jp2)
- 6-5 Summary / p159 (0086.jp2)
- Chapter 7. General Conclusions / p161 (0087.jp2)
- Acknowledgments / p165 (0089.jp2)
- References / p167 (0090.jp2)
- List of Publications / p175 (0094.jp2)