A study on microcavity surface emitting lasers 面発光レーザの極微化に関する研究

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著者

    • 玉貫, 岳正 タマヌキ, タケマサ

書誌事項

タイトル

A study on microcavity surface emitting lasers

タイトル別名

面発光レーザの極微化に関する研究

著者名

玉貫, 岳正

著者別名

タマヌキ, タケマサ

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

甲第2624号

学位授与年月日

1993-03-26

注記・抄録

博士論文

目次

  1. Contents / (0006.jp2)
  2. Chapter1 Introduction / p1 (0009.jp2)
  3. 1.1 Background of Optical Communications and Optical Devices / p1 (0009.jp2)
  4. 1.2 Surface Emitting Lasers / p6 (0014.jp2)
  5. 1.3 Objectives of This Study / p8 (0016.jp2)
  6. Chapter2 Device Design and Ultimate Characteristics of Surface Emitting Lasers / p33 (0041.jp2)
  7. 2.1 Threshold Condition of Surface Emitting Lasers / p34 (0042.jp2)
  8. 2.2 Ultimate Threshold of Microcavity Surface Emitting Lasers / p36 (0044.jp2)
  9. 2.3 Efficiency and Output Power of Microcavity Surface Emitting Lasers / p38 (0046.jp2)
  10. Chapter3 Fabrication and Lasing Characteristics of GaAs/GaAlAs Short-cavity Surface Emitting Lasers / p52 (0060.jp2)
  11. 3.1 Fabrication Process of Short-cavity Surface Emitting Lasers / p52 (0060.jp2)
  12. 3.2 Active Layer Thickness Dependence on Threshold Current of Short-cavity Surface Emitting Lasers. / p59 (0067.jp2)
  13. 3.3 Temperature Characteristics of Short-cavity Surface Emitting Lasers. / p60 (0068.jp2)
  14. Chapter4 Fabrication and Lasing Characteristics of InGaAs/GaAlAs Surface Emitting Lasers / p97 (0105.jp2)
  15. 4.1 Crystal Growth of InGaAs/GaAlAs by MOCVD / p97 (0105.jp2)
  16. 4.2 Lasing Characteristics of InGaAs/GaAlAs Quantum Well Stripe Lasers using AlAs/GaAs Multi-layer DBRs / p104 (0112.jp2)
  17. 4.3 Lasing Characteristics of InGaAs/GaAlAs Surface Emitting Lasers / p106 (0114.jp2)
  18. Chapter5 Microfabrications for Microcavity Surface Emitting Lasers / p156 (0164.jp2)
  19. 5.1 (NH₄)₂[化学式]-passivation for GaAs/GaAlAs Buried Heterostructure Lasers / p156 (0164.jp2)
  20. 5.2 Estimation of Interface Recombination Velocity / p159 (0167.jp2)
  21. 5.3 Thermal Treatment Temperature Dependence on Interface Recombination Velocity of Sulfur Passivated GaAs / p161 (0169.jp2)
  22. 5.4 Estimation of Threshold Current of Microcavity Surface Emitting Lasers / p163 (0171.jp2)
  23. 5.5 RIBE and MOCVD regrowth for Microcavity Structure / p165 (0173.jp2)
  24. Chapter6 Fabrication of Buried Heterostructure Surface Emitting Lasers / p190 (0198.jp2)
  25. 6.1 Fabrication Process of Buried Heterostructure Surface Emitting Lasers / p190 (0198.jp2)
  26. 6.2 Characteristics of Buried Heterostructure Surface Emitting Lasers / p192 (0200.jp2)
  27. Chapter7 Spontaneous Emission Control and Photon Recycling in Microcavity Surface Emitting Lasers / p203 (0211.jp2)
  28. 7.1 Spontaneous Emission Control in Microcavity Surface Emitting Lasers / p203 (0211.jp2)
  29. 7.2 Linewidth of Microcavity Surface Emitting Lasers / p206 (0214.jp2)
  30. 7.3 Photon Recycling in Microcavity Surface Emitting Lasers / p206 (0214.jp2)
  31. Chapter8 Considerations for Microcavity Surface Emitting Lasers / p230 (0238.jp2)
  32. Chapter9 Conclusions / p233 (0241.jp2)
  33. Appendix A Fabrication Method of Perpendicular Sidewall Profile of Photoresist using a Chlorobenzene Solution / p235 (0243.jp2)
  34. Appendix B Substrate Etching Process Using a Spray Method / p238 (0246.jp2)
  35. Appendix C Diffraction Loss in Circular Plane Mirrors Cavity / p240 (0248.jp2)
  36. Appendix D Reflective Profile of λ-cavity and DBRs Structure / p242 (0250.jp2)
  37. Appendix E Temperature Characteristics of InGaAs/GaAlAs SE Laser / p254 (0262.jp2)
  38. Appendix F Optical Confinement Factor of InGaAs/GaAlAs Stripe Lasers / p255 (0263.jp2)
  39. Tables and Figure Captions / p258 (0266.jp2)
  40. Acknowledgments / (0272.jp2)
  41. List of Publications / (0275.jp2)
  42. 面発光レーザの極微化に関する研究 / (0279.jp2)
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各種コード

  • NII論文ID(NAID)
    500000096965
  • NII著者ID(NRID)
    • 8000000097193
  • DOI(NDL)
  • NDL書誌ID
    • 000000261279
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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