A study on microcavity surface emitting lasers 面発光レーザの極微化に関する研究
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Bibliographic Information
- Title
-
A study on microcavity surface emitting lasers
- Other Title
-
面発光レーザの極微化に関する研究
- Author
-
玉貫, 岳正
- Author(Another name)
-
タマヌキ, タケマサ
- University
-
東京工業大学
- Types of degree
-
博士 (工学)
- Grant ID
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甲第2624号
- Degree year
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1993-03-26
Note and Description
博士論文
Table of Contents
- Contents / (0006.jp2)
- Chapter1 Introduction / p1 (0009.jp2)
- 1.1 Background of Optical Communications and Optical Devices / p1 (0009.jp2)
- 1.2 Surface Emitting Lasers / p6 (0014.jp2)
- 1.3 Objectives of This Study / p8 (0016.jp2)
- Chapter2 Device Design and Ultimate Characteristics of Surface Emitting Lasers / p33 (0041.jp2)
- 2.1 Threshold Condition of Surface Emitting Lasers / p34 (0042.jp2)
- 2.2 Ultimate Threshold of Microcavity Surface Emitting Lasers / p36 (0044.jp2)
- 2.3 Efficiency and Output Power of Microcavity Surface Emitting Lasers / p38 (0046.jp2)
- Chapter3 Fabrication and Lasing Characteristics of GaAs/GaAlAs Short-cavity Surface Emitting Lasers / p52 (0060.jp2)
- 3.1 Fabrication Process of Short-cavity Surface Emitting Lasers / p52 (0060.jp2)
- 3.2 Active Layer Thickness Dependence on Threshold Current of Short-cavity Surface Emitting Lasers. / p59 (0067.jp2)
- 3.3 Temperature Characteristics of Short-cavity Surface Emitting Lasers. / p60 (0068.jp2)
- Chapter4 Fabrication and Lasing Characteristics of InGaAs/GaAlAs Surface Emitting Lasers / p97 (0105.jp2)
- 4.1 Crystal Growth of InGaAs/GaAlAs by MOCVD / p97 (0105.jp2)
- 4.2 Lasing Characteristics of InGaAs/GaAlAs Quantum Well Stripe Lasers using AlAs/GaAs Multi-layer DBRs / p104 (0112.jp2)
- 4.3 Lasing Characteristics of InGaAs/GaAlAs Surface Emitting Lasers / p106 (0114.jp2)
- Chapter5 Microfabrications for Microcavity Surface Emitting Lasers / p156 (0164.jp2)
- 5.1 (NH₄)₂[化学式]-passivation for GaAs/GaAlAs Buried Heterostructure Lasers / p156 (0164.jp2)
- 5.2 Estimation of Interface Recombination Velocity / p159 (0167.jp2)
- 5.3 Thermal Treatment Temperature Dependence on Interface Recombination Velocity of Sulfur Passivated GaAs / p161 (0169.jp2)
- 5.4 Estimation of Threshold Current of Microcavity Surface Emitting Lasers / p163 (0171.jp2)
- 5.5 RIBE and MOCVD regrowth for Microcavity Structure / p165 (0173.jp2)
- Chapter6 Fabrication of Buried Heterostructure Surface Emitting Lasers / p190 (0198.jp2)
- 6.1 Fabrication Process of Buried Heterostructure Surface Emitting Lasers / p190 (0198.jp2)
- 6.2 Characteristics of Buried Heterostructure Surface Emitting Lasers / p192 (0200.jp2)
- Chapter7 Spontaneous Emission Control and Photon Recycling in Microcavity Surface Emitting Lasers / p203 (0211.jp2)
- 7.1 Spontaneous Emission Control in Microcavity Surface Emitting Lasers / p203 (0211.jp2)
- 7.2 Linewidth of Microcavity Surface Emitting Lasers / p206 (0214.jp2)
- 7.3 Photon Recycling in Microcavity Surface Emitting Lasers / p206 (0214.jp2)
- Chapter8 Considerations for Microcavity Surface Emitting Lasers / p230 (0238.jp2)
- Chapter9 Conclusions / p233 (0241.jp2)
- Appendix A Fabrication Method of Perpendicular Sidewall Profile of Photoresist using a Chlorobenzene Solution / p235 (0243.jp2)
- Appendix B Substrate Etching Process Using a Spray Method / p238 (0246.jp2)
- Appendix C Diffraction Loss in Circular Plane Mirrors Cavity / p240 (0248.jp2)
- Appendix D Reflective Profile of λ-cavity and DBRs Structure / p242 (0250.jp2)
- Appendix E Temperature Characteristics of InGaAs/GaAlAs SE Laser / p254 (0262.jp2)
- Appendix F Optical Confinement Factor of InGaAs/GaAlAs Stripe Lasers / p255 (0263.jp2)
- Tables and Figure Captions / p258 (0266.jp2)
- Acknowledgments / (0272.jp2)
- List of Publications / (0275.jp2)
- 面発光レーザの極微化に関する研究 / (0279.jp2)