Improved electrical characteristics and integration of resonant-tunneling hot electron transistors (RHETs) 共鳴トンネリングホットエレクトロントランジスタ(RHET)の電気的特性改善と集積化に関する研究

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著者

    • 今村, 健一 イマムラ, ケンイチ

書誌事項

タイトル

Improved electrical characteristics and integration of resonant-tunneling hot electron transistors (RHETs)

タイトル別名

共鳴トンネリングホットエレクトロントランジスタ(RHET)の電気的特性改善と集積化に関する研究

著者名

今村, 健一

著者別名

イマムラ, ケンイチ

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

乙第2463号

学位授与年月日

1993-03-31

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. Contents / (0005.jp2)
  3. Chapter1 Introduction / p1 (0008.jp2)
  4. 1.1 Background and purpose of this study / p1 (0008.jp2)
  5. 1.2 Summary of previous work on HETs and RHETs / p5 (0012.jp2)
  6. 1.3 Objective of this study / p20 (0027.jp2)
  7. 1.4 Contents of this study / p20 (0027.jp2)
  8. References / p21 (0028.jp2)
  9. Chapter2 Developments of InGaAs RHETs / p24 (0031.jp2)
  10. 2.1 Limit of GaAs/AlGaAs HETs / p24 (0031.jp2)
  11. 2.2 Design and fabrication of InGaAs/In(AlGa)As HETs / p29 (0036.jp2)
  12. 2.3 Characterization of DC performance in InGaAs/In(AlGa)As HETs / p32 (0039.jp2)
  13. 2.4 The operating principle and backgroud of RTBs development / p36 (0043.jp2)
  14. 2.5 Development of InGaAs/In(AlGa)As RHETs / p38 (0045.jp2)
  15. References / p43 (0050.jp2)
  16. Chapter3 Development of fundamental technology for integrating InGaAs/In(AlGa)As RHETs / p45 (0052.jp2)
  17. 3.1 Self-alignment process for InGaAs RHETs / p45 (0052.jp2)
  18. 3.2 Designing the collector barrier structure to improve RHET DCcharacteristics / p49 (0056.jp2)
  19. 3.3 Microwave performace of InGaAs/In(AlGa)As RHETs / p59 (0066.jp2)
  20. References / p76 (0083.jp2)
  21. Chapter4 Development of RHET integrated circuits / p78 (0085.jp2)
  22. 4.1 Preliminaries / p78 (0085.jp2)
  23. 4.2 Design of the RHET basic logic gates / p78 (0085.jp2)
  24. 4.3 Structure of RHET integrated circuits and their fabrication process / p80 (0087.jp2)
  25. 4.4 Fabrication and operation of a RHET latch circuit / p83 (0090.jp2)
  26. 4.5 Fabrication and operation of a RHET full adder / p86 (0093.jp2)
  27. References / p90 (0097.jp2)
  28. Chapter5 Investigation into high-speed RHET ICs / p92 (0099.jp2)
  29. 5.1 Background / p92 (0099.jp2)
  30. 5.2 Circuit simulation for RHET logic circuits / p92 (0099.jp2)
  31. 5.3 Reducing base resistance using Pd/Ge electrodes / p95 (0102.jp2)
  32. 5.4 Circuit simulation for reduced RB RHETs / p105 (0112.jp2)
  33. References / p107 (0114.jp2)
  34. Chaptrer6 Conclusion / p108 (0115.jp2)
  35. Appendix: / p110 (0117.jp2)
  36. A1.Observation of ballistic electrons using magnetic field effects inGaAs/AlGaAs HETs / p110 (0117.jp2)
  37. A2.InGaAs/In(AlGa)As RHETs with pseudmorphic InAs base / p117 (0124.jp2)
  38. Acknowledgments / p128 (0135.jp2)
  39. Published paper / p129 (0136.jp2)
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各種コード

  • NII論文ID(NAID)
    500000097128
  • NII著者ID(NRID)
    • 8000000097356
  • DOI(NDL)
  • NDL書誌ID
    • 000000261442
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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