Improved electrical characteristics and integration of resonant-tunneling hot electron transistors (RHETs) 共鳴トンネリングホットエレクトロントランジスタ(RHET)の電気的特性改善と集積化に関する研究

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Author

    • 今村, 健一 イマムラ, ケンイチ

Bibliographic Information

Title

Improved electrical characteristics and integration of resonant-tunneling hot electron transistors (RHETs)

Other Title

共鳴トンネリングホットエレクトロントランジスタ(RHET)の電気的特性改善と集積化に関する研究

Author

今村, 健一

Author(Another name)

イマムラ, ケンイチ

University

東京工業大学

Types of degree

博士 (工学)

Grant ID

乙第2463号

Degree year

1993-03-31

Note and Description

博士論文

Table of Contents

  1. 論文目録 (2コマ目)
  2. Contents (5コマ目)
  3. Chapter1 Introduction/p1 (8コマ目)
  4. 1.1 Background and purpose of this study/p1 (8コマ目)
  5. 1.2 Summary of previous work on HETs and RHETs/p5 (12コマ目)
  6. 1.3 Objective of this study/p20 (27コマ目)
  7. 1.4 Contents of this study/p20 (27コマ目)
  8. References/p21 (28コマ目)
  9. Chapter2 Developments of InGaAs RHETs/p24 (31コマ目)
  10. 2.1 Limit of GaAs/AlGaAs HETs/p24 (31コマ目)
  11. 2.2 Design and fabrication of InGaAs/In(AlGa)As HETs/p29 (36コマ目)
  12. 2.3 Characterization of DC performance in InGaAs/In(AlGa)As HETs/p32 (39コマ目)
  13. 2.4 The operating principle and backgroud of RTBs development/p36 (43コマ目)
  14. 2.5 Development of InGaAs/In(AlGa)As RHETs/p38 (45コマ目)
  15. References/p43 (50コマ目)
  16. Chapter3 Development of fundamental technology for integrating InGaAs/In(AlGa)As RHETs/p45 (52コマ目)
  17. 3.1 Self-alignment process for InGaAs RHETs/p45 (52コマ目)
  18. 3.2 Designing the collector barrier structure to improve RHET DCcharacteristics/p49 (56コマ目)
  19. 3.3 Microwave performace of InGaAs/In(AlGa)As RHETs/p59 (66コマ目)
  20. References/p76 (83コマ目)
  21. Chapter4 Development of RHET integrated circuits/p78 (85コマ目)
  22. 4.1 Preliminaries/p78 (85コマ目)
  23. 4.2 Design of the RHET basic logic gates/p78 (85コマ目)
  24. 4.3 Structure of RHET integrated circuits and their fabrication process/p80 (87コマ目)
  25. 4.4 Fabrication and operation of a RHET latch circuit/p83 (90コマ目)
  26. 4.5 Fabrication and operation of a RHET full adder/p86 (93コマ目)
  27. References/p90 (97コマ目)
  28. Chapter5 Investigation into high-speed RHET ICs/p92 (99コマ目)
  29. 5.1 Background/p92 (99コマ目)
  30. 5.2 Circuit simulation for RHET logic circuits/p92 (99コマ目)
  31. 5.3 Reducing base resistance using Pd/Ge electrodes/p95 (102コマ目)
  32. 5.4 Circuit simulation for reduced RB RHETs/p105 (112コマ目)
  33. References/p107 (114コマ目)
  34. Chaptrer6 Conclusion/p108 (115コマ目)
  35. Appendix:/p110 (117コマ目)
  36. A1.Observation of ballistic electrons using magnetic field effects inGaAs/AlGaAs HETs/p110 (117コマ目)
  37. A2.InGaAs/In(AlGa)As RHETs with pseudmorphic InAs base/p117 (124コマ目)
  38. Acknowledgments/p128 (135コマ目)
  39. Published paper/p129 (136コマ目)
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Codes

  • NII Article ID (NAID)
    500000097128
  • NII Author ID (NRID)
    • 8000000097356
  • DOI(NDL)
  • NDLBibID
    • 000000261442
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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